JPS5457968A - Electrical testing unit of semiconductor device and its production - Google Patents
Electrical testing unit of semiconductor device and its productionInfo
- Publication number
- JPS5457968A JPS5457968A JP12545477A JP12545477A JPS5457968A JP S5457968 A JPS5457968 A JP S5457968A JP 12545477 A JP12545477 A JP 12545477A JP 12545477 A JP12545477 A JP 12545477A JP S5457968 A JPS5457968 A JP S5457968A
- Authority
- JP
- Japan
- Prior art keywords
- film
- piercing
- testing
- product mark
- electrical testing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012360 testing method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- 230000002950 deficient Effects 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 2
- 238000013102 re-test Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000005070 sampling Methods 0.000 abstract 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To facilitate the sampling re-testing and the defect analysis of only defective products by piercing a small hole in a part of one frame of the film, where elements are mounted, and detecting the hole optically.
CONSTITUTION: Film 1 is wound up through indifectible product mark detection part 10, electrical testing part which moves vertically to bring contact 6 into contact with film 1, indefectible product mark piercing part 12, and defective element piercing part 13. At a re-testing or defect analysis time, the presence of the indefectible product mark pierced hole is detected by lamp 17 and photodetector 18 during the passing through detection part 10, and it is decided whether the test in measuring part 11 is required or not. Thus, erroneous discrimination can be prevented and only defective elements are subjected to retesting, so that the number of processes can be reduced considerably
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12545477A JPS5457968A (en) | 1977-10-18 | 1977-10-18 | Electrical testing unit of semiconductor device and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12545477A JPS5457968A (en) | 1977-10-18 | 1977-10-18 | Electrical testing unit of semiconductor device and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5457968A true JPS5457968A (en) | 1979-05-10 |
| JPS62575B2 JPS62575B2 (en) | 1987-01-08 |
Family
ID=14910485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12545477A Granted JPS5457968A (en) | 1977-10-18 | 1977-10-18 | Electrical testing unit of semiconductor device and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5457968A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62203476U (en) * | 1986-06-16 | 1987-12-25 | ||
| JPS63206672A (en) * | 1987-02-23 | 1988-08-25 | Nec Corp | Handling apparatus of tabic |
| JPS6475975A (en) * | 1987-09-18 | 1989-03-22 | Nec Corp | Handling apparatus of ic |
| JPH02236468A (en) * | 1989-03-10 | 1990-09-19 | Nec Corp | Electrically selecting method for film carrier semiconductor device |
| JPH0496344A (en) * | 1990-08-13 | 1992-03-27 | Toshiba Corp | Film carrier structure |
| US6440757B1 (en) * | 2001-08-29 | 2002-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Microelectronic fabrication die electrical probe apparatus electrical test method providing enhanced microelectronic fabrication die electrical test accuracy and efficiency |
-
1977
- 1977-10-18 JP JP12545477A patent/JPS5457968A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62203476U (en) * | 1986-06-16 | 1987-12-25 | ||
| JPS63206672A (en) * | 1987-02-23 | 1988-08-25 | Nec Corp | Handling apparatus of tabic |
| JPS6475975A (en) * | 1987-09-18 | 1989-03-22 | Nec Corp | Handling apparatus of ic |
| JPH02236468A (en) * | 1989-03-10 | 1990-09-19 | Nec Corp | Electrically selecting method for film carrier semiconductor device |
| JPH0496344A (en) * | 1990-08-13 | 1992-03-27 | Toshiba Corp | Film carrier structure |
| US6440757B1 (en) * | 2001-08-29 | 2002-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Microelectronic fabrication die electrical probe apparatus electrical test method providing enhanced microelectronic fabrication die electrical test accuracy and efficiency |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62575B2 (en) | 1987-01-08 |
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