JPS5464982A - Junction-type field effect semiconductor device and its manufacture - Google Patents

Junction-type field effect semiconductor device and its manufacture

Info

Publication number
JPS5464982A
JPS5464982A JP13172277A JP13172277A JPS5464982A JP S5464982 A JPS5464982 A JP S5464982A JP 13172277 A JP13172277 A JP 13172277A JP 13172277 A JP13172277 A JP 13172277A JP S5464982 A JPS5464982 A JP S5464982A
Authority
JP
Japan
Prior art keywords
region
type
layer
opening
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13172277A
Other languages
Japanese (ja)
Inventor
Michihiro Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13172277A priority Critical patent/JPS5464982A/en
Publication of JPS5464982A publication Critical patent/JPS5464982A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a J-FET which features a high density and the mutual conductance with low noise and can be unified suitably with the bipolar IC, by forming the source region within the gate region and then forming the channel region of a wider width than the source region within these regions and in parallel to the substrate.
CONSTITUTION: N--type layer 2 to become the drain region is epitaxial-grown on P-type Si substrate 1 to be covered with oxide film 7, and P-type gate region 3 is formed through diffusion whithin layer 2 with the opening drilled. Film 7 is then renewed, and the opening is drille dagain to form N+-type source region 4 through diffusion within region 3. At the same time, N+-type region 5 for draw-out of the drain electrode is formed too within layer 2. After this, film 7 is coated again. Then an opening wider than region 3 is drilled to inject the N-type impurity ion, and thus N-type channle region 6 featuring a wider width than region 3 and 4 is formed within region 3 and 4 through a heat treatment. After this, drain electrode 8 and source electrode 9 are attached to region 5 and 4 respectively.
COPYRIGHT: (C)1979,JPO&Japio
JP13172277A 1977-11-01 1977-11-01 Junction-type field effect semiconductor device and its manufacture Pending JPS5464982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13172277A JPS5464982A (en) 1977-11-01 1977-11-01 Junction-type field effect semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13172277A JPS5464982A (en) 1977-11-01 1977-11-01 Junction-type field effect semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5464982A true JPS5464982A (en) 1979-05-25

Family

ID=15064664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13172277A Pending JPS5464982A (en) 1977-11-01 1977-11-01 Junction-type field effect semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5464982A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56172627U (en) * 1980-05-23 1981-12-19

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223251A (en) * 1975-08-18 1977-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223251A (en) * 1975-08-18 1977-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56172627U (en) * 1980-05-23 1981-12-19

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