JPS5466780A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5466780A JPS5466780A JP13369477A JP13369477A JPS5466780A JP S5466780 A JPS5466780 A JP S5466780A JP 13369477 A JP13369477 A JP 13369477A JP 13369477 A JP13369477 A JP 13369477A JP S5466780 A JPS5466780 A JP S5466780A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- groove
- coated
- type gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain high frequency response through the short gate length, by growing epitaxial layer on the side wall of the V groove placed on the surface of semiconductor substrate and by forming the gate metal layer on the epitaxial layer through the use of the step difference of the window of the anti-step shape for the corss section formed on the V groove. CONSTITUTION:On the N<+> type GaAs substrate 1, the semi-insulation GaAs layer 2 and the N<+> type GaAs layer 3 are grown with lamination, and the lamination film of the SiO2 film 4 and the Si3N4 film 5 is coated on it. Next, the window 6 is opened on the film 5 and the under cut is caused on the film 4 with over etching, isotropic etching is made by taking the films 4 and 5 as masks, forming the V shaped groove 8 reaching the substate 1. After that, in the groove 8, N type GaAs layer 9 is grown epitaxially and the SiO2 film 10 of anti-step shape for the corss section is coated only at the bottom of the groove 8, and the Al gate metallic layer 11 is coated on it from a part of the epitaxial layer 9. Next, the gate electrode 16 is attached on it, the drain electrode is on the layer 3 and the source electrode is at the back of the substrate 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13369477A JPS5466780A (en) | 1977-11-08 | 1977-11-08 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13369477A JPS5466780A (en) | 1977-11-08 | 1977-11-08 | Manufacture for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5466780A true JPS5466780A (en) | 1979-05-29 |
| JPS6129557B2 JPS6129557B2 (en) | 1986-07-07 |
Family
ID=15110683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13369477A Granted JPS5466780A (en) | 1977-11-08 | 1977-11-08 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5466780A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120168A (en) * | 1979-03-08 | 1980-09-16 | Sony Corp | Field effect type semiconductor device |
| JPS59969A (en) * | 1982-06-25 | 1984-01-06 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor |
| JP2003069041A (en) * | 2001-08-29 | 2003-03-07 | Denso Corp | Silicon carbide semiconductor device and method of manufacturing the same |
| JP2003068761A (en) * | 2001-08-29 | 2003-03-07 | Denso Corp | Silicon carbide semiconductor device and method of manufacturing the same |
-
1977
- 1977-11-08 JP JP13369477A patent/JPS5466780A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120168A (en) * | 1979-03-08 | 1980-09-16 | Sony Corp | Field effect type semiconductor device |
| JPS59969A (en) * | 1982-06-25 | 1984-01-06 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor |
| JP2003069041A (en) * | 2001-08-29 | 2003-03-07 | Denso Corp | Silicon carbide semiconductor device and method of manufacturing the same |
| JP2003068761A (en) * | 2001-08-29 | 2003-03-07 | Denso Corp | Silicon carbide semiconductor device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6129557B2 (en) | 1986-07-07 |
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