JPS544567A - Growing apparatus of ion beam crystal - Google Patents

Growing apparatus of ion beam crystal

Info

Publication number
JPS544567A
JPS544567A JP7013077A JP7013077A JPS544567A JP S544567 A JPS544567 A JP S544567A JP 7013077 A JP7013077 A JP 7013077A JP 7013077 A JP7013077 A JP 7013077A JP S544567 A JPS544567 A JP S544567A
Authority
JP
Japan
Prior art keywords
ion beam
growing apparatus
beam crystal
single crystal
letting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7013077A
Other languages
Japanese (ja)
Inventor
Tatsuo Fuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7013077A priority Critical patent/JPS544567A/en
Publication of JPS544567A publication Critical patent/JPS544567A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To form compound single crystal thin films by ion beam forming elements with good controllability by letting cathode ion beams mutually act on the single crystal substrate surface maintained at a specified temperature and potential.
COPYRIGHT: (C)1979,JPO&Japio
JP7013077A 1977-06-13 1977-06-13 Growing apparatus of ion beam crystal Pending JPS544567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7013077A JPS544567A (en) 1977-06-13 1977-06-13 Growing apparatus of ion beam crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7013077A JPS544567A (en) 1977-06-13 1977-06-13 Growing apparatus of ion beam crystal

Publications (1)

Publication Number Publication Date
JPS544567A true JPS544567A (en) 1979-01-13

Family

ID=13422661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7013077A Pending JPS544567A (en) 1977-06-13 1977-06-13 Growing apparatus of ion beam crystal

Country Status (1)

Country Link
JP (1) JPS544567A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624924A (en) * 1979-08-08 1981-03-10 Agency Of Ind Science & Technol Manufacture of solid thin film by ion beam
US4622093A (en) * 1983-07-27 1986-11-11 At&T Bell Laboratories Method of selective area epitaxial growth using ion beams

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624924A (en) * 1979-08-08 1981-03-10 Agency Of Ind Science & Technol Manufacture of solid thin film by ion beam
US4622093A (en) * 1983-07-27 1986-11-11 At&T Bell Laboratories Method of selective area epitaxial growth using ion beams

Similar Documents

Publication Publication Date Title
JPS544567A (en) Growing apparatus of ion beam crystal
JPS54866A (en) Molecular beam crystal growing device
JPS5432985A (en) Flattening method for substrate surface with protrusion
JPS53127266A (en) Forming method of marker
JPS54971A (en) Growing method of ion beam crystal
JPS52143761A (en) Crystal growth method
JPS54865A (en) Molecular beam crystal growing method
JPS5432970A (en) Appreciating method for semiconductor device
JPS5434770A (en) Semiconductor substrate and manufacture of semiconductor using it
JPS51115764A (en) Manufacturing method of a magnetron
JPS5342759A (en) Interference measuring method
JPS53104161A (en) Crystal growth method
JPS5244562A (en) Epitaxial growth method
JPS53112662A (en) Growing unit for ion beam thin film
JPS5358978A (en) Growing method for crystal
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS5244563A (en) Method of treating sapphire substrate
JPS5376668A (en) X-ray exposure method
JPS5357974A (en) Electron beam exposure method
JPS51112355A (en) Reflection prevented lens
JPS5384691A (en) Production of semiconductor device
JPS5345171A (en) Molecular beam epitaxial growth method
JPS5357763A (en) Diaphragm of electron beam exposure apparatus
JPS5277584A (en) Growing crystal