JPS5468126A - Memory element - Google Patents
Memory elementInfo
- Publication number
- JPS5468126A JPS5468126A JP13526477A JP13526477A JPS5468126A JP S5468126 A JPS5468126 A JP S5468126A JP 13526477 A JP13526477 A JP 13526477A JP 13526477 A JP13526477 A JP 13526477A JP S5468126 A JPS5468126 A JP S5468126A
- Authority
- JP
- Japan
- Prior art keywords
- film
- power supply
- type layer
- cell
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000005055 memory storage Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Power Sources (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To keep the memory condition for volatile memories enabling to be written in even with the main power supply removed, by forming the power supply for memory storage in the process of IC manufacture in IC package or chip.
CONSTITUTION: PN junction is caused on the Si substrate 4 of IC chip by forming the N type layer 5 and the P type layer 6 in it, and the 63 Ni film 8 having pure base radiation performance is coated on it via the SiO2 film 7. Next, the P type layer of PN junction semiconductor separately formed is pushed on the Ni film 8 and the incorporated cell is constituted by attaching wiring to this, and package is formed by using ceramic. At this time, the part being the cell can be around 0.05mm2 per IC, the space is less, the size of IC is not great, and the damage due to radiant rays can be avoided through the use of 63Ni. With this constitutuion, this cell can keep the memory to non-volatility with the main power supply removed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13526477A JPS5468126A (en) | 1977-11-11 | 1977-11-11 | Memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13526477A JPS5468126A (en) | 1977-11-11 | 1977-11-11 | Memory element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5468126A true JPS5468126A (en) | 1979-06-01 |
Family
ID=15147628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13526477A Pending JPS5468126A (en) | 1977-11-11 | 1977-11-11 | Memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5468126A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528535A (en) * | 1978-08-17 | 1980-02-29 | Nec Corp | Memory device |
| JPS57109183A (en) * | 1980-12-26 | 1982-07-07 | Hitachi Ltd | Non-volatile memory |
-
1977
- 1977-11-11 JP JP13526477A patent/JPS5468126A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528535A (en) * | 1978-08-17 | 1980-02-29 | Nec Corp | Memory device |
| JPS57109183A (en) * | 1980-12-26 | 1982-07-07 | Hitachi Ltd | Non-volatile memory |
| JPS5931570A (en) * | 1980-12-26 | 1984-02-20 | Hitachi Ltd | Whole solid thin film lithium secondary battery |
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