JPS5469980A - Production of compound semiconductor light emitting elements - Google Patents

Production of compound semiconductor light emitting elements

Info

Publication number
JPS5469980A
JPS5469980A JP13660777A JP13660777A JPS5469980A JP S5469980 A JPS5469980 A JP S5469980A JP 13660777 A JP13660777 A JP 13660777A JP 13660777 A JP13660777 A JP 13660777A JP S5469980 A JPS5469980 A JP S5469980A
Authority
JP
Japan
Prior art keywords
layer
compound semiconductor
ohmic contact
alloy
alloy layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13660777A
Other languages
Japanese (ja)
Inventor
Katsuhiko Kawakita
Norio Ozawa
Kisaku Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13660777A priority Critical patent/JPS5469980A/en
Publication of JPS5469980A publication Critical patent/JPS5469980A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped

Landscapes

  • Led Devices (AREA)

Abstract

PURPOSE: To obtain ohmic contact of good reliability by forming an Au layer on the p type layer of a compound semiconductor crystal, then laminating a gold-zinc alloy layer thereafter performing heat treatment in a temperature range of 470°C to 520°C in an Ar or N2 atmosphere.
CONSTITUTION: An Au thin layer 24 is evaporated on the p type layer 13 side on the element body and an Au-Zn alloy layer 24a is evaporated thereon. Further a lead wire 14b is bonded to the alloy layer 24a and an Au-Si alloy layer 15 and Au layer 15a are formed on the n type GaP crysral substrate 11 side. Thereafter, heat treatment is performed for 5 to 20 minutes in an Ar inert atmosphere of about 500°C to alloy the respective metal layers, thereby obtaining ohmic contact. The electrodes 24, 24a having been obtained in this way provide good ohmic contact and yet the bondability of the lead wire 14a is stable as well.
COPYRIGHT: (C)1979,JPO&Japio
JP13660777A 1977-11-16 1977-11-16 Production of compound semiconductor light emitting elements Pending JPS5469980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13660777A JPS5469980A (en) 1977-11-16 1977-11-16 Production of compound semiconductor light emitting elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13660777A JPS5469980A (en) 1977-11-16 1977-11-16 Production of compound semiconductor light emitting elements

Publications (1)

Publication Number Publication Date
JPS5469980A true JPS5469980A (en) 1979-06-05

Family

ID=15179241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13660777A Pending JPS5469980A (en) 1977-11-16 1977-11-16 Production of compound semiconductor light emitting elements

Country Status (1)

Country Link
JP (1) JPS5469980A (en)

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