JPS5575276A - 3[5 group compound semiconductor device - Google Patents

3[5 group compound semiconductor device

Info

Publication number
JPS5575276A
JPS5575276A JP14926378A JP14926378A JPS5575276A JP S5575276 A JPS5575276 A JP S5575276A JP 14926378 A JP14926378 A JP 14926378A JP 14926378 A JP14926378 A JP 14926378A JP S5575276 A JPS5575276 A JP S5575276A
Authority
JP
Japan
Prior art keywords
layer
electrode layer
aluminum
evaporated
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14926378A
Other languages
Japanese (ja)
Inventor
Katsumi Tsujii
Yoshinobu Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP14926378A priority Critical patent/JPS5575276A/en
Publication of JPS5575276A publication Critical patent/JPS5575276A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To maintain a good wiring bonding property, by providing a barrier metal layer between a surface aluminum layer and an electrode layer for ohmic contact with a crystal substrate to prevent mutual diffusion between the surface aluminum layer and the electrode layer.
CONSTITUTION: An Ag-Be alloy is evaporated on the surface of a p-layer 9 of a Gap substrate. Silver is then evaporated on the alloy, thereby providing an electrode layer 11. Titanium is evaporated as an electrode layer 12 on the former 11. Aluminum is then evaporated as a surface electrode layer 13. An electrode consisting of the layers 11∼13 is photoetched to a desired pattern. As a result, the electrode layer 12 serves as a barrier metal layer between the electrode layer 11 and the aluminum layer 13 to prevent mutual diffusion between them. The aluminum on the surface of the electrode is prevented from being denatured due to heat treatment for obtaining ohmic contact. Therefore, a good bonding property is maintained.
COPYRIGHT: (C)1980,JPO&Japio
JP14926378A 1978-12-02 1978-12-02 3[5 group compound semiconductor device Pending JPS5575276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14926378A JPS5575276A (en) 1978-12-02 1978-12-02 3[5 group compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14926378A JPS5575276A (en) 1978-12-02 1978-12-02 3[5 group compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5575276A true JPS5575276A (en) 1980-06-06

Family

ID=15471412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14926378A Pending JPS5575276A (en) 1978-12-02 1978-12-02 3[5 group compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5575276A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117283A (en) * 1981-01-13 1982-07-21 Sharp Corp 3-5 group compound semiconductor device
JPS57117284A (en) * 1981-01-13 1982-07-21 Sharp Corp 3-5 group compound semiconductor device
JPS62162327A (en) * 1985-12-23 1987-07-18 Sharp Corp Electrode forming method for iii-v compound semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117283A (en) * 1981-01-13 1982-07-21 Sharp Corp 3-5 group compound semiconductor device
JPS57117284A (en) * 1981-01-13 1982-07-21 Sharp Corp 3-5 group compound semiconductor device
JPS62162327A (en) * 1985-12-23 1987-07-18 Sharp Corp Electrode forming method for iii-v compound semiconductor element

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS5575276A (en) 3[5 group compound semiconductor device
JPS5294773A (en) Semiconductor element and its manufacture
JPS5498596A (en) Picture display unit and its manufacture
JPS5516415A (en) Diode
JPS54117680A (en) Semiconductor device
JPS5455390A (en) Light emitting element
JPS52139368A (en) Semiconductor device
JPS52156556A (en) Electrode structure
JPS55103742A (en) Fabrication of electrode of semiconductor element
JPS5487471A (en) Manufacture of semiconductor device
JPS5585059A (en) Semiconductor device
JPS57181143A (en) Manufacture of semiconductor device
JPS5419690A (en) Electrode of semiconductor devices
JPS56130920A (en) Forming method of electrode for semiconductor device
JPS524170A (en) Manufacturing process of semiconductor element
JPS52146561A (en) Electrode production of semiconductor devices
JPS5246765A (en) Method of producing semiconductor device
JPS5768022A (en) Manufacture of compound semiconductor device
JPS5542049A (en) Hydrogen gas detecting element
JPS53116073A (en) Semiconductor device
JPS52144272A (en) Forming method of electrode in semiconductor device
JPS5285469A (en) Solder connecting electrode in semiconductor devices
JPS5469977A (en) Forming method of electrodes for compound semiconducror light emitting elements
JPS5529142A (en) Electrode forming method for group 3-5 compound semiconductor device