JPS5470762A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5470762A
JPS5470762A JP13756677A JP13756677A JPS5470762A JP S5470762 A JPS5470762 A JP S5470762A JP 13756677 A JP13756677 A JP 13756677A JP 13756677 A JP13756677 A JP 13756677A JP S5470762 A JPS5470762 A JP S5470762A
Authority
JP
Japan
Prior art keywords
drain
oxide film
semiconductor device
source
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13756677A
Other languages
Japanese (ja)
Inventor
Isamu Kawanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP13756677A priority Critical patent/JPS5470762A/en
Publication of JPS5470762A publication Critical patent/JPS5470762A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To form the source, the gate and the drain at one time by injecting the impurity ion from above the oxide film featuring varies thickness.
CONSTITUTION: Oxide film 5 and 6 at the drain and source parts are set to the same thickness, and B+7 of a fixed acceleration voltage is injected to form the self- matching gate simultaneously. In this method, the number of the manufacturing processes can be decreased greatly.
COPYRIGHT: (C)1979,JPO&Japio
JP13756677A 1977-11-16 1977-11-16 Semiconductor device Pending JPS5470762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13756677A JPS5470762A (en) 1977-11-16 1977-11-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13756677A JPS5470762A (en) 1977-11-16 1977-11-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5470762A true JPS5470762A (en) 1979-06-06

Family

ID=15201705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13756677A Pending JPS5470762A (en) 1977-11-16 1977-11-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5470762A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978626A (en) * 1988-09-02 1990-12-18 Motorola, Inc. LDD transistor process having doping sensitive endpoint etching
US5292675A (en) * 1991-12-24 1994-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming a MOS transistor and structure thereof
US5619045A (en) * 1993-11-05 1997-04-08 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US5648277A (en) * 1993-11-05 1997-07-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5736414A (en) * 1994-07-14 1998-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6331723B1 (en) 1991-08-26 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having at least two transistors having LDD region in one pixel
US6337231B1 (en) 1993-05-26 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6555843B1 (en) 1991-05-16 2003-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6867431B2 (en) * 1993-09-20 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20170358102A1 (en) * 2016-06-10 2017-12-14 Mitsubishi Electric Corporation Object recognition processing apparatus, object recognition processing method, and autonomous driving system

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978626A (en) * 1988-09-02 1990-12-18 Motorola, Inc. LDD transistor process having doping sensitive endpoint etching
US6555843B1 (en) 1991-05-16 2003-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6803600B2 (en) 1991-08-26 2004-10-12 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US7821011B2 (en) 1991-08-26 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US7456427B2 (en) 1991-08-26 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US6331723B1 (en) 1991-08-26 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having at least two transistors having LDD region in one pixel
US5292675A (en) * 1991-12-24 1994-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming a MOS transistor and structure thereof
US7087962B1 (en) 1991-12-24 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming a MOS transistor having lightly dopped drain regions and structure thereof
US6337231B1 (en) 1993-05-26 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6867431B2 (en) * 1993-09-20 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
US6617612B2 (en) * 1993-11-05 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a semiconductor integrated circuit
US6218678B1 (en) 1993-11-05 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5648277A (en) * 1993-11-05 1997-07-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5619045A (en) * 1993-11-05 1997-04-08 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US5736414A (en) * 1994-07-14 1998-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20170358102A1 (en) * 2016-06-10 2017-12-14 Mitsubishi Electric Corporation Object recognition processing apparatus, object recognition processing method, and autonomous driving system

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