JPS5471987A - Production of photo mask - Google Patents
Production of photo maskInfo
- Publication number
- JPS5471987A JPS5471987A JP13897977A JP13897977A JPS5471987A JP S5471987 A JPS5471987 A JP S5471987A JP 13897977 A JP13897977 A JP 13897977A JP 13897977 A JP13897977 A JP 13897977A JP S5471987 A JPS5471987 A JP S5471987A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask
- film
- sputtering
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 239000010408 film Substances 0.000 abstract 3
- 238000004544 sputter deposition Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 150000004756 silanes Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE: To lower adhering power of mask and resist by depositing transparent dielectric film on the mask pattern formed on a substrate, and treating the surface to make the surface free energy of this film smaller than the free energy of the substrate contacting the photo resist.
CONSTITUTION: Cr mask having deposited SiO2 film and Cr thin film which becomes photo shielding part on a glass substrate is sufficiently cleaned and installed in a water-cooled substrate holder within a sputtering device. The device is evacuated to be lower than 5×10-6, and is filled with mixed sputtering gas of Ar and O2, and the degree of vacuum is maintained constantly at 9×10-1 Pa. Then, while injecting vapor of hexamethly disilazane, which is a derivative of silane, into the gap between the substrate and the trarget provided on the water-cooled metal electrode, sputtering is performed. Thus, since the energy on the mask surface drops down to 24 mJ/m2, the separation of the photo resist spread thereon may be easy.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52138979A JPS6053457B2 (en) | 1977-11-21 | 1977-11-21 | Photomask manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52138979A JPS6053457B2 (en) | 1977-11-21 | 1977-11-21 | Photomask manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5471987A true JPS5471987A (en) | 1979-06-08 |
| JPS6053457B2 JPS6053457B2 (en) | 1985-11-26 |
Family
ID=15234633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52138979A Expired JPS6053457B2 (en) | 1977-11-21 | 1977-11-21 | Photomask manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6053457B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6488549A (en) * | 1987-09-30 | 1989-04-03 | Sharp Kk | Photomask |
| US6565704B2 (en) * | 1998-07-08 | 2003-05-20 | Nitto Denko Corporation | Process for the removal of resist material |
| JP2018535446A (en) * | 2016-01-27 | 2018-11-29 | エルジー・ケム・リミテッド | Film mask, manufacturing method thereof, and pattern forming method using the same |
| US10969686B2 (en) * | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
| US11029596B2 (en) | 2016-01-27 | 2021-06-08 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63113940U (en) * | 1987-01-16 | 1988-07-22 |
-
1977
- 1977-11-21 JP JP52138979A patent/JPS6053457B2/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6488549A (en) * | 1987-09-30 | 1989-04-03 | Sharp Kk | Photomask |
| US6565704B2 (en) * | 1998-07-08 | 2003-05-20 | Nitto Denko Corporation | Process for the removal of resist material |
| JP2018535446A (en) * | 2016-01-27 | 2018-11-29 | エルジー・ケム・リミテッド | Film mask, manufacturing method thereof, and pattern forming method using the same |
| US10969677B2 (en) | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
| US10969686B2 (en) * | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
| EP3410213B1 (en) * | 2016-01-27 | 2021-05-26 | LG Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
| US11029596B2 (en) | 2016-01-27 | 2021-06-08 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6053457B2 (en) | 1985-11-26 |
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