JPS5472985A - Manufacture of integrated-circuit device - Google Patents

Manufacture of integrated-circuit device

Info

Publication number
JPS5472985A
JPS5472985A JP13999677A JP13999677A JPS5472985A JP S5472985 A JPS5472985 A JP S5472985A JP 13999677 A JP13999677 A JP 13999677A JP 13999677 A JP13999677 A JP 13999677A JP S5472985 A JPS5472985 A JP S5472985A
Authority
JP
Japan
Prior art keywords
region
type
film
diffusing
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13999677A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13999677A priority Critical patent/JPS5472985A/en
Publication of JPS5472985A publication Critical patent/JPS5472985A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a low-resistance buried region with a sheet resistance in the same way as the use of an As impurity, by using the same mask, at the time of the formation of the buried region on a semiconductor substrate, for diffusing a P impurity before diffusing a high-density Sb impurity. CONSTITUTION:Onto P-type Si substrate 11, SiO2 film 12 with window 12a is provided, and film 12 is used as a mask for diffusing P impurities to form N<+>-type buried region 13. Next, SiO2 film 14 generated at this time is removed and Sb impurities are diffused to higher density than that of region 13 to form shallow N<+>- type region 15 inside region 13, thereby providing the burying double layer composed of regions 13 and 15. Although N-type layer 16 is epitaxy-grown on the entire surface after film 12 is removed, the infiltration of impurities contained in regions 13 and 15 into layer 16 owing to the auto-doping is a little at this time. In this way, the IC substrate with the double buried region is obtained, whrer the element region is formed in a normal method.
JP13999677A 1977-11-24 1977-11-24 Manufacture of integrated-circuit device Pending JPS5472985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13999677A JPS5472985A (en) 1977-11-24 1977-11-24 Manufacture of integrated-circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13999677A JPS5472985A (en) 1977-11-24 1977-11-24 Manufacture of integrated-circuit device

Publications (1)

Publication Number Publication Date
JPS5472985A true JPS5472985A (en) 1979-06-11

Family

ID=15258496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13999677A Pending JPS5472985A (en) 1977-11-24 1977-11-24 Manufacture of integrated-circuit device

Country Status (1)

Country Link
JP (1) JPS5472985A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785243A (en) * 1980-11-17 1982-05-27 Fujitsu Ltd Manufacture of semiconductor device
JP2000188296A (en) * 1998-12-22 2000-07-04 Sony Corp Semiconductor device and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785243A (en) * 1980-11-17 1982-05-27 Fujitsu Ltd Manufacture of semiconductor device
JP2000188296A (en) * 1998-12-22 2000-07-04 Sony Corp Semiconductor device and manufacturing method thereof

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