JPS5473097A - Gas sensor - Google Patents

Gas sensor

Info

Publication number
JPS5473097A
JPS5473097A JP14044677A JP14044677A JPS5473097A JP S5473097 A JPS5473097 A JP S5473097A JP 14044677 A JP14044677 A JP 14044677A JP 14044677 A JP14044677 A JP 14044677A JP S5473097 A JPS5473097 A JP S5473097A
Authority
JP
Japan
Prior art keywords
substrate
film
semiconductor thin
gas sensor
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14044677A
Other languages
Japanese (ja)
Inventor
Koichi Oguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP14044677A priority Critical patent/JPS5473097A/en
Publication of JPS5473097A publication Critical patent/JPS5473097A/en
Pending legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE: To make the gas sensor for detecting specific gas from the change in the electric conductivity of semiconductor thin films highly reliable, miniature and inexpensive by using the diffused resistances within a Si substrate as a heater.
CONSTITUTION: Diffused resistances 6 of conductivity type opposite from that of a Si substrate 5 are formed on the Si substrate 5. A Si oxide film 10 is formed on the surface of the substrate 5 and contact holes A and scribe line regions B are windowed through etching. Next, an oxide semiconductor thin film 8 such as SnO2 is formed on the film 10. Finally, electrodes 7 for heater and electrodes 9 for the oxide semiconductor thin-film are formed and a-a' is scribed and cracked, whereby the substrate is divided to each pellet.
COPYRIGHT: (C)1979,JPO&Japio
JP14044677A 1977-11-22 1977-11-22 Gas sensor Pending JPS5473097A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14044677A JPS5473097A (en) 1977-11-22 1977-11-22 Gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14044677A JPS5473097A (en) 1977-11-22 1977-11-22 Gas sensor

Publications (1)

Publication Number Publication Date
JPS5473097A true JPS5473097A (en) 1979-06-12

Family

ID=15268808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14044677A Pending JPS5473097A (en) 1977-11-22 1977-11-22 Gas sensor

Country Status (1)

Country Link
JP (1) JPS5473097A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717849A (en) * 1980-05-21 1982-01-29 Siemens Ag Thin film gas sensor
JPS58203318A (en) * 1982-05-20 1983-11-26 Matsushita Electric Ind Co Ltd combustor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717849A (en) * 1980-05-21 1982-01-29 Siemens Ag Thin film gas sensor
JPS58203318A (en) * 1982-05-20 1983-11-26 Matsushita Electric Ind Co Ltd combustor

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