JPS5477573A - Operating method of plasma treating apparatus - Google Patents
Operating method of plasma treating apparatusInfo
- Publication number
- JPS5477573A JPS5477573A JP13509177A JP13509177A JPS5477573A JP S5477573 A JPS5477573 A JP S5477573A JP 13509177 A JP13509177 A JP 13509177A JP 13509177 A JP13509177 A JP 13509177A JP S5477573 A JPS5477573 A JP S5477573A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- less
- action
- neglible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13509177A JPS5477573A (en) | 1977-11-10 | 1977-11-10 | Operating method of plasma treating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13509177A JPS5477573A (en) | 1977-11-10 | 1977-11-10 | Operating method of plasma treating apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5477573A true JPS5477573A (en) | 1979-06-21 |
| JPS6214936B2 JPS6214936B2 (fr) | 1987-04-04 |
Family
ID=15143617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13509177A Granted JPS5477573A (en) | 1977-11-10 | 1977-11-10 | Operating method of plasma treating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5477573A (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727024A (en) * | 1980-07-25 | 1982-02-13 | Mitsubishi Electric Corp | Washing of reactor for plasma cvd method |
| JPS63129630A (ja) * | 1986-11-20 | 1988-06-02 | Fuji Electric Co Ltd | プラズマcvd薄膜形成法 |
| JPH01102921A (ja) * | 1987-10-16 | 1989-04-20 | Semiconductor Energy Lab Co Ltd | 被膜作製方法 |
| JP2007294279A (ja) * | 2006-04-26 | 2007-11-08 | Matsushita Electric Ind Co Ltd | プラズマ処理装置およびプラズマ処理方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117071A (en) * | 1976-03-29 | 1977-10-01 | Hitachi Ltd | Self-cleaning type preparation of semiconductor |
-
1977
- 1977-11-10 JP JP13509177A patent/JPS5477573A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117071A (en) * | 1976-03-29 | 1977-10-01 | Hitachi Ltd | Self-cleaning type preparation of semiconductor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727024A (en) * | 1980-07-25 | 1982-02-13 | Mitsubishi Electric Corp | Washing of reactor for plasma cvd method |
| JPS63129630A (ja) * | 1986-11-20 | 1988-06-02 | Fuji Electric Co Ltd | プラズマcvd薄膜形成法 |
| JPH01102921A (ja) * | 1987-10-16 | 1989-04-20 | Semiconductor Energy Lab Co Ltd | 被膜作製方法 |
| JP2007294279A (ja) * | 2006-04-26 | 2007-11-08 | Matsushita Electric Ind Co Ltd | プラズマ処理装置およびプラズマ処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6214936B2 (fr) | 1987-04-04 |
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