JPS5481067A - Impurity diffusing method for semiconductor - Google Patents

Impurity diffusing method for semiconductor

Info

Publication number
JPS5481067A
JPS5481067A JP14814177A JP14814177A JPS5481067A JP S5481067 A JPS5481067 A JP S5481067A JP 14814177 A JP14814177 A JP 14814177A JP 14814177 A JP14814177 A JP 14814177A JP S5481067 A JPS5481067 A JP S5481067A
Authority
JP
Japan
Prior art keywords
semiconductor
density
semiconductor crystal
layer
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14814177A
Other languages
Japanese (ja)
Other versions
JPS5757856B2 (en
Inventor
Hironori Inoue
Takaya Suzuki
Naohiro Monma
Hiroyuki Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14814177A priority Critical patent/JPS5481067A/en
Publication of JPS5481067A publication Critical patent/JPS5481067A/en
Publication of JPS5757856B2 publication Critical patent/JPS5757856B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To form a low-density pre-deposition layer of, especially, more than 20Ω/D in sheet resistance with good reproducibility by forming a highly-precise and well-reproducible predeposition layer in a pre-deposition process through impurity diffusion of a semiconductor.
CONSTITUTION: Into high-temperature container 3 in which semiconductor crystal 1 is contained, reaction raw-material gas containing a compound of impurities is supplied 5, thereby forming a diffused layer which contains low-density impurities on the surface of semiconductor crystal 1. During impurity diffusion for semiconductor crystal, the impurity density of raw-material gas before being supplied into reac- tor furnace 3 is monitored by gas analyzer 17 and adjusted corresponding to the difference between the measurement value and a set value.
COPYRIGHT: (C)1979,JPO&Japio
JP14814177A 1977-12-12 1977-12-12 Impurity diffusing method for semiconductor Granted JPS5481067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14814177A JPS5481067A (en) 1977-12-12 1977-12-12 Impurity diffusing method for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14814177A JPS5481067A (en) 1977-12-12 1977-12-12 Impurity diffusing method for semiconductor

Publications (2)

Publication Number Publication Date
JPS5481067A true JPS5481067A (en) 1979-06-28
JPS5757856B2 JPS5757856B2 (en) 1982-12-07

Family

ID=15446180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14814177A Granted JPS5481067A (en) 1977-12-12 1977-12-12 Impurity diffusing method for semiconductor

Country Status (1)

Country Link
JP (1) JPS5481067A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244716A (en) * 1988-08-05 1990-02-14 Matsushita Electric Ind Co Ltd Method and apparatus for introducing impurity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244716A (en) * 1988-08-05 1990-02-14 Matsushita Electric Ind Co Ltd Method and apparatus for introducing impurity

Also Published As

Publication number Publication date
JPS5757856B2 (en) 1982-12-07

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