JPS548474A - Gate protection unit - Google Patents

Gate protection unit

Info

Publication number
JPS548474A
JPS548474A JP7322377A JP7322377A JPS548474A JP S548474 A JPS548474 A JP S548474A JP 7322377 A JP7322377 A JP 7322377A JP 7322377 A JP7322377 A JP 7322377A JP S548474 A JPS548474 A JP S548474A
Authority
JP
Japan
Prior art keywords
gate
protection unit
gate protection
mosfet
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7322377A
Other languages
Japanese (ja)
Inventor
Isao Yoshida
Shigeo Ishii
Masatomo Furuumi
Masaru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7322377A priority Critical patent/JPS548474A/en
Publication of JPS548474A publication Critical patent/JPS548474A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To remarkable increase the static breakdown strength of MOSFET gate, by forming the gate region thinner and fitting electrodes at the both ends, and by connecting one to the gate electrode of MOSFET and by taking another as the gate input terminal, in the gate protection unit having the diodes in anti parallel connection.
JP7322377A 1977-06-22 1977-06-22 Gate protection unit Pending JPS548474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7322377A JPS548474A (en) 1977-06-22 1977-06-22 Gate protection unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7322377A JPS548474A (en) 1977-06-22 1977-06-22 Gate protection unit

Publications (1)

Publication Number Publication Date
JPS548474A true JPS548474A (en) 1979-01-22

Family

ID=13511951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7322377A Pending JPS548474A (en) 1977-06-22 1977-06-22 Gate protection unit

Country Status (1)

Country Link
JP (1) JPS548474A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2376182A1 (en) * 1976-12-29 1978-07-28 Gen Electric THERMOPLASTIC COMPOSITIONS OF REINFORCED POLYESTER
FR2421043A1 (en) * 1978-03-30 1979-10-26 Minnesota Mining & Mfg POLYESTER FILM HAVING IMPROVED WORKABILITY AND RESISTANCE TO TEARING AND PROCESS FOR THEIR PREPARATION
US4994874A (en) * 1988-10-28 1991-02-19 Kabushiki Kaisha Toshiba Input protection circuit for semiconductor integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2376182A1 (en) * 1976-12-29 1978-07-28 Gen Electric THERMOPLASTIC COMPOSITIONS OF REINFORCED POLYESTER
FR2421043A1 (en) * 1978-03-30 1979-10-26 Minnesota Mining & Mfg POLYESTER FILM HAVING IMPROVED WORKABILITY AND RESISTANCE TO TEARING AND PROCESS FOR THEIR PREPARATION
US4994874A (en) * 1988-10-28 1991-02-19 Kabushiki Kaisha Toshiba Input protection circuit for semiconductor integrated circuit device

Similar Documents

Publication Publication Date Title
JPS54152845A (en) High dielectric strength mosfet circuit
JPS51114074A (en) Insulation gate type field effect transistor
JPS5437461A (en) Optical coupling switch circuit
JPS53121579A (en) Semiconductor integrated circuit
JPS5267556A (en) High voltage proof mis switching circuit
JPS5598867A (en) Protecting device
JPS546473A (en) Protection unit
JPS5425164A (en) Semiconductor device
JPS53127275A (en) Planar type field effect transistor
JPS53114683A (en) Field effect transistor of insulating gate type
JPS5412546A (en) Sound surfave wave unit
JPS5422180A (en) Thyristor
JPS55145420A (en) Split electrode type ccd filter
JPS55166952A (en) Bistable circuit
JPS52149325A (en) Semiconductor rectifing device
JPS52144279A (en) Semiconductor device
JPS51142280A (en) Gate turn-off thyristor
JPS5378158A (en) Mos inverter circuit
JPS51126770A (en) Semiconductor unit
JPS5223244A (en) Limiter circuit
JPS546444A (en) Static latch circuit
JPS5520013A (en) Multi-section ceramic filter
JPS52132683A (en) Semiconductor device
JPS5268369A (en) Semiconductor device
GB951127A (en) Extinguishing device for electrical arcs