JPS5487073A - Ohmic contact testing method for semiconductor device - Google Patents

Ohmic contact testing method for semiconductor device

Info

Publication number
JPS5487073A
JPS5487073A JP15524477A JP15524477A JPS5487073A JP S5487073 A JPS5487073 A JP S5487073A JP 15524477 A JP15524477 A JP 15524477A JP 15524477 A JP15524477 A JP 15524477A JP S5487073 A JPS5487073 A JP S5487073A
Authority
JP
Japan
Prior art keywords
ohmic contact
testing method
diode
semiconductor device
defective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15524477A
Other languages
Japanese (ja)
Inventor
Kuniyoshi Tamatoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15524477A priority Critical patent/JPS5487073A/en
Publication of JPS5487073A publication Critical patent/JPS5487073A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To realize the testing method for the ohmic contact to secure the decision of the quality of the ohmic contact with a high sensitivity and with no dangerous probability.
CONSTITUTION: The cold air featuring a temperature less than the surface temperature of glass case 1 of tested diode 6 is sprayed to the glass case while applying sufficiently large amount of forward bias current IF to diode 6. In this case, the defective ohmic contact features voltage VF of diode 6 changing instantaneously in the negative direction; while the non-defective one features VF changing instantaneously in the positive direction respectively.
COPYRIGHT: (C)1979,JPO&Japio
JP15524477A 1977-12-22 1977-12-22 Ohmic contact testing method for semiconductor device Pending JPS5487073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15524477A JPS5487073A (en) 1977-12-22 1977-12-22 Ohmic contact testing method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15524477A JPS5487073A (en) 1977-12-22 1977-12-22 Ohmic contact testing method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5487073A true JPS5487073A (en) 1979-07-11

Family

ID=15601674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15524477A Pending JPS5487073A (en) 1977-12-22 1977-12-22 Ohmic contact testing method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5487073A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915874A (en) * 1982-07-19 1984-01-26 Fuji Electric Co Ltd Method for testing glass sealed type diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915874A (en) * 1982-07-19 1984-01-26 Fuji Electric Co Ltd Method for testing glass sealed type diode

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