JPS5491076A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5491076A JPS5491076A JP15839177A JP15839177A JPS5491076A JP S5491076 A JPS5491076 A JP S5491076A JP 15839177 A JP15839177 A JP 15839177A JP 15839177 A JP15839177 A JP 15839177A JP S5491076 A JPS5491076 A JP S5491076A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- drain
- sitl
- sit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To manufacture a SITL with its gate-drain capacity made small, by making the SIT drain of N-type doped poly-Si.
CONSTITUTION: In N--type epitaxial layer 2 on N+-type substrate 1, P-type layer 3 and P+-type layer 4 are both formed and drain 8 of the SIT is formed of N-type doped poly-Si. The contact area between layer 8 and P+-type gate layer 4 can be halved in this constitution. As a result, the sum of power delay time can be reduced to half. Further, since the drain protrudes, bad influence upon the potential barrier in the channel is eliminated, so that a high-speed SITL of low power consumption can be formed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15839177A JPS5491076A (en) | 1977-12-28 | 1977-12-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15839177A JPS5491076A (en) | 1977-12-28 | 1977-12-28 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5491076A true JPS5491076A (en) | 1979-07-19 |
Family
ID=15670696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15839177A Pending JPS5491076A (en) | 1977-12-28 | 1977-12-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5491076A (en) |
-
1977
- 1977-12-28 JP JP15839177A patent/JPS5491076A/en active Pending
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