JPS5492072A - Manufacture of mis field effect transistor - Google Patents

Manufacture of mis field effect transistor

Info

Publication number
JPS5492072A
JPS5492072A JP15823477A JP15823477A JPS5492072A JP S5492072 A JPS5492072 A JP S5492072A JP 15823477 A JP15823477 A JP 15823477A JP 15823477 A JP15823477 A JP 15823477A JP S5492072 A JPS5492072 A JP S5492072A
Authority
JP
Japan
Prior art keywords
type
layer
film
poly
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15823477A
Other languages
Japanese (ja)
Other versions
JPS612311B2 (en
Inventor
Yoshiharu Kobayashi
Tetsushi Sakai
Takahiro Makino
Masaaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15823477A priority Critical patent/JPS5492072A/en
Publication of JPS5492072A publication Critical patent/JPS5492072A/en
Publication of JPS612311B2 publication Critical patent/JPS612311B2/ja
Granted legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To provide the opening to the 2-layer film of SiO2 and Si3N4 on the N- type Si substrate to secure the small and shallow source-drain layer through diffusion siven from poly Si, and thus to decrease the parasitic capacity.
CONSTITUTION: Oxide film 63 is formed partially on N-type Si substrate 61, and SiO2105, Si3N4106 and R-type poly Si107 are laminated. The sequential etching is given through SiO2 mask 111 to form window 116 larger than wondow 114. P- type poly Si is coated after selective etching of Si3N4114 with the selective opening and oxidation carried out. As a result, oxide film 73 and 74 are formed on P-type poly Si71 and 72, and oxide film 125 is produced on the substrate surface. Thus, P-type diffusion layer 81 and 82 are formed. Then film 125 is removed, and oxide thin film 84 is provided. N+-type layer 83 is formed through the ion injection. Finally, the opening is drilled to layer 73 and 74, and electrode 88 and 89 are formed along with gate electrode 90. In such way, layer 81 and 82 can be formed in a small area, thus decreasing the parasitic capacity.
COPYRIGHT: (C)1979,JPO&Japio
JP15823477A 1977-12-29 1977-12-29 Manufacture of mis field effect transistor Granted JPS5492072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15823477A JPS5492072A (en) 1977-12-29 1977-12-29 Manufacture of mis field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15823477A JPS5492072A (en) 1977-12-29 1977-12-29 Manufacture of mis field effect transistor

Publications (2)

Publication Number Publication Date
JPS5492072A true JPS5492072A (en) 1979-07-20
JPS612311B2 JPS612311B2 (en) 1986-01-23

Family

ID=15667199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15823477A Granted JPS5492072A (en) 1977-12-29 1977-12-29 Manufacture of mis field effect transistor

Country Status (1)

Country Link
JP (1) JPS5492072A (en)

Also Published As

Publication number Publication date
JPS612311B2 (en) 1986-01-23

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