JPS5494280A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5494280A
JPS5494280A JP88578A JP88578A JPS5494280A JP S5494280 A JPS5494280 A JP S5494280A JP 88578 A JP88578 A JP 88578A JP 88578 A JP88578 A JP 88578A JP S5494280 A JPS5494280 A JP S5494280A
Authority
JP
Japan
Prior art keywords
film
etching
resist
substrate
opening ends
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP88578A
Other languages
Japanese (ja)
Inventor
Junichi Okano
Yoshihiro Hashizume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP88578A priority Critical patent/JPS5494280A/en
Publication of JPS5494280A publication Critical patent/JPS5494280A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To form openings of side faces of mildly tapered faces by providing a mask having resistance to etching solution for the film on the main surface of a substrate on said film, etching the film at a high temperature to reduce its thickness and etching away the remaining portions at a low temperature.
CONSTITUTION: When a resist mask 3' is provided on the oxide film 2 on a Si substrate 1 and the film is etched with a solution of 35 to 45°C comprising adding alcohol to NH4F, the rate of etching increases and the adhesion of the resist decreases, causing opening ends to liberate. After part of the film thickness is etched away, the substrate is rinsed and is then prebaked to let the liberated resist be adhered at the opening ends. Etching the film at ordinary temperature after this enables openings with mildly tapered faces to be obtained. When a wiring layer 14 is made after removing the resist, step cutting does not occur.
COPYRIGHT: (C)1979,JPO&Japio
JP88578A 1978-01-10 1978-01-10 Production of semiconductor device Pending JPS5494280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP88578A JPS5494280A (en) 1978-01-10 1978-01-10 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP88578A JPS5494280A (en) 1978-01-10 1978-01-10 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5494280A true JPS5494280A (en) 1979-07-25

Family

ID=11486118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP88578A Pending JPS5494280A (en) 1978-01-10 1978-01-10 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5494280A (en)

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