JPS549572A - Sample production method for transmission electronic microscope - Google Patents

Sample production method for transmission electronic microscope

Info

Publication number
JPS549572A
JPS549572A JP7447977A JP7447977A JPS549572A JP S549572 A JPS549572 A JP S549572A JP 7447977 A JP7447977 A JP 7447977A JP 7447977 A JP7447977 A JP 7447977A JP S549572 A JPS549572 A JP S549572A
Authority
JP
Japan
Prior art keywords
production method
electronic microscope
transmission electronic
sample production
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7447977A
Other languages
Japanese (ja)
Other versions
JPS6010252B2 (en
Inventor
Osamu Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP52074479A priority Critical patent/JPS6010252B2/en
Publication of JPS549572A publication Critical patent/JPS549572A/en
Publication of JPS6010252B2 publication Critical patent/JPS6010252B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Sampling And Sample Adjustment (AREA)

Abstract

PURPOSE: To obtain a thin lead sample containing the narrow specific region through the ion impact method, the chemical etching method or chemical/mechanical polishing method applied together.
COPYRIGHT: (C)1979,JPO&Japio
JP52074479A 1977-06-24 1977-06-24 Method for preparing specimens for transmission electron microscopy Expired JPS6010252B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52074479A JPS6010252B2 (en) 1977-06-24 1977-06-24 Method for preparing specimens for transmission electron microscopy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52074479A JPS6010252B2 (en) 1977-06-24 1977-06-24 Method for preparing specimens for transmission electron microscopy

Publications (2)

Publication Number Publication Date
JPS549572A true JPS549572A (en) 1979-01-24
JPS6010252B2 JPS6010252B2 (en) 1985-03-15

Family

ID=13548439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52074479A Expired JPS6010252B2 (en) 1977-06-24 1977-06-24 Method for preparing specimens for transmission electron microscopy

Country Status (1)

Country Link
JP (1) JPS6010252B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002005857A (en) * 2000-06-19 2002-01-09 Semiconductor Energy Lab Co Ltd Semiconductor device and inspection method therefor
JP2002318178A (en) * 2001-04-24 2002-10-31 Shin Etsu Handotai Co Ltd Semiconductor crystal defect evaluation method
CN103900887A (en) * 2012-12-28 2014-07-02 北京有色金属研究总院 Method for displaying macro morphology of as-cast lead or lead alloy

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002005857A (en) * 2000-06-19 2002-01-09 Semiconductor Energy Lab Co Ltd Semiconductor device and inspection method therefor
JP2002318178A (en) * 2001-04-24 2002-10-31 Shin Etsu Handotai Co Ltd Semiconductor crystal defect evaluation method
CN103900887A (en) * 2012-12-28 2014-07-02 北京有色金属研究总院 Method for displaying macro morphology of as-cast lead or lead alloy

Also Published As

Publication number Publication date
JPS6010252B2 (en) 1985-03-15

Similar Documents

Publication Publication Date Title
JPS5253668A (en) Production of semiconductor device
JPS549572A (en) Sample production method for transmission electronic microscope
JPS5253658A (en) Method of introducing impurity into semiconductor
JPS5432985A (en) Flattening method for substrate surface with protrusion
JPS5248468A (en) Process for production of semiconductor device
JPS54192A (en) Shielding wall of reactor container
JPS51121651A (en) Screw and its manufacturing method
JPS53116077A (en) Etching method
JPS53106576A (en) Ion etching device
JPS5440542A (en) Manufacture of elastic surface-wave device
JPS53125769A (en) Sputter etching method and container used for it
JPS5346222A (en) Solid state pick up unit
JPS5232675A (en) Etching solution for chemical compound
JPS52131466A (en) Plasma etching method
JPS5416969A (en) Manufacture of ferrite thin film for electronic microscope observation
JPS5368070A (en) Etching method
JPS53123029A (en) Manufacture of pickup-tube target
JPS5376758A (en) Plasma etching method
JPS51140484A (en) Method of etching wafer
JPS52122459A (en) Electronic microscope
JPS53101278A (en) Etching process method
JPS5440565A (en) Wafer chamfering method
JPS53121571A (en) Electrode formation method for semiconductor device
JPS51126738A (en) Test method of piezo-electric tuning fork
JPS5423902A (en) Method for manufacturing conductor