JPS54970A - Impurity diffusion method - Google Patents

Impurity diffusion method

Info

Publication number
JPS54970A
JPS54970A JP6575777A JP6575777A JPS54970A JP S54970 A JPS54970 A JP S54970A JP 6575777 A JP6575777 A JP 6575777A JP 6575777 A JP6575777 A JP 6575777A JP S54970 A JPS54970 A JP S54970A
Authority
JP
Japan
Prior art keywords
impurity diffusion
diffusion method
atomosphere
gettering
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6575777A
Other languages
Japanese (ja)
Inventor
Akira Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6575777A priority Critical patent/JPS54970A/en
Publication of JPS54970A publication Critical patent/JPS54970A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To increase the stability at the boundary of Si-SiO2, by performing heat treatment of the substrate coated by impurity diffusion source and gettering the contamination of heavy metals, under the atomosphere including halogen gas.
JP6575777A 1977-06-06 1977-06-06 Impurity diffusion method Pending JPS54970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6575777A JPS54970A (en) 1977-06-06 1977-06-06 Impurity diffusion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6575777A JPS54970A (en) 1977-06-06 1977-06-06 Impurity diffusion method

Publications (1)

Publication Number Publication Date
JPS54970A true JPS54970A (en) 1979-01-06

Family

ID=13296212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6575777A Pending JPS54970A (en) 1977-06-06 1977-06-06 Impurity diffusion method

Country Status (1)

Country Link
JP (1) JPS54970A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121326A (en) * 1984-11-19 1986-06-09 Oki Electric Ind Co Ltd Manufacture of semiconductor device
EP0598438A1 (en) * 1992-11-17 1994-05-25 Koninklijke Philips Electronics N.V. Method for diffusing a dopant into a semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121326A (en) * 1984-11-19 1986-06-09 Oki Electric Ind Co Ltd Manufacture of semiconductor device
EP0598438A1 (en) * 1992-11-17 1994-05-25 Koninklijke Philips Electronics N.V. Method for diffusing a dopant into a semiconductor

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