JPS54973A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS54973A
JPS54973A JP6578377A JP6578377A JPS54973A JP S54973 A JPS54973 A JP S54973A JP 6578377 A JP6578377 A JP 6578377A JP 6578377 A JP6578377 A JP 6578377A JP S54973 A JPS54973 A JP S54973A
Authority
JP
Japan
Prior art keywords
semiconductor element
increase
bonding strength
layer electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6578377A
Other languages
Japanese (ja)
Inventor
Ryosuke Morinari
Tomiro Yasuda
Tasao Soga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6578377A priority Critical patent/JPS54973A/en
Publication of JPS54973A publication Critical patent/JPS54973A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To increase the bonding strength, by inserting the Ti more than 1000Å between Al and Ni, in a layer electrode of Al-Ni-Ag.
COPYRIGHT: (C)1979,JPO&Japio
JP6578377A 1977-06-06 1977-06-06 Semiconductor element Pending JPS54973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6578377A JPS54973A (en) 1977-06-06 1977-06-06 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6578377A JPS54973A (en) 1977-06-06 1977-06-06 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS54973A true JPS54973A (en) 1979-01-06

Family

ID=13296969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6578377A Pending JPS54973A (en) 1977-06-06 1977-06-06 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS54973A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5767546A (en) * 1994-12-30 1998-06-16 Siliconix Incorporated Laternal power mosfet having metal strap layer to reduce distributed resistance

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5767546A (en) * 1994-12-30 1998-06-16 Siliconix Incorporated Laternal power mosfet having metal strap layer to reduce distributed resistance
US5945709A (en) * 1994-12-30 1999-08-31 Siliconix Incorporated Integrated circuit die having thick bus to reduce distributed resistance
US6159841A (en) * 1994-12-30 2000-12-12 Siliconix Incorporated Method of fabricating lateral power MOSFET having metal strap layer to reduce distributed resistance

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