JPS54973A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS54973A JPS54973A JP6578377A JP6578377A JPS54973A JP S54973 A JPS54973 A JP S54973A JP 6578377 A JP6578377 A JP 6578377A JP 6578377 A JP6578377 A JP 6578377A JP S54973 A JPS54973 A JP S54973A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- increase
- bonding strength
- layer electrode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To increase the bonding strength, by inserting the Ti more than 1000Å between Al and Ni, in a layer electrode of Al-Ni-Ag.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6578377A JPS54973A (en) | 1977-06-06 | 1977-06-06 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6578377A JPS54973A (en) | 1977-06-06 | 1977-06-06 | Semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54973A true JPS54973A (en) | 1979-01-06 |
Family
ID=13296969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6578377A Pending JPS54973A (en) | 1977-06-06 | 1977-06-06 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54973A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5767546A (en) * | 1994-12-30 | 1998-06-16 | Siliconix Incorporated | Laternal power mosfet having metal strap layer to reduce distributed resistance |
-
1977
- 1977-06-06 JP JP6578377A patent/JPS54973A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5767546A (en) * | 1994-12-30 | 1998-06-16 | Siliconix Incorporated | Laternal power mosfet having metal strap layer to reduce distributed resistance |
| US5945709A (en) * | 1994-12-30 | 1999-08-31 | Siliconix Incorporated | Integrated circuit die having thick bus to reduce distributed resistance |
| US6159841A (en) * | 1994-12-30 | 2000-12-12 | Siliconix Incorporated | Method of fabricating lateral power MOSFET having metal strap layer to reduce distributed resistance |
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