JPS54987A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54987A
JPS54987A JP6576177A JP6576177A JPS54987A JP S54987 A JPS54987 A JP S54987A JP 6576177 A JP6576177 A JP 6576177A JP 6576177 A JP6576177 A JP 6576177A JP S54987 A JPS54987 A JP S54987A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
electrode
depositing
integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6576177A
Other languages
Japanese (ja)
Inventor
Yoshiaki Kamigaki
Yoshifumi Kawamoto
Kiyoo Ito
Tetsukazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6576177A priority Critical patent/JPS54987A/en
Publication of JPS54987A publication Critical patent/JPS54987A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To increase the degree of integration and the dielectric strength and also, to reduce the dispersion in the threshold voltage, by selectively etching the side part of the electrode through depositing the material less in the etching speed than that of the electrode material on the gate electrode, when forming the offset section at the drain region side.
COPYRIGHT: (C)1979,JPO&Japio
JP6576177A 1977-06-06 1977-06-06 Manufacture for semiconductor device Pending JPS54987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6576177A JPS54987A (en) 1977-06-06 1977-06-06 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6576177A JPS54987A (en) 1977-06-06 1977-06-06 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS54987A true JPS54987A (en) 1979-01-06

Family

ID=13296325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6576177A Pending JPS54987A (en) 1977-06-06 1977-06-06 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54987A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110266A (en) * 1980-02-04 1981-09-01 Fujitsu Ltd Manufacture of semiconductor device
JPS57155776A (en) * 1981-03-23 1982-09-25 Hitachi Ltd Mos semiconductor device and manufacture thereof
US8460734B2 (en) 2004-03-25 2013-06-11 San-Ei Gen F.F.I., Inc. Method of modifying gum arabic, modified gum arabic obtained by the method, and use thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022583A (en) * 1973-06-27 1975-03-11
JPS5114275A (en) * 1974-07-25 1976-02-04 Fujitsu Ltd Handotaisochino seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022583A (en) * 1973-06-27 1975-03-11
JPS5114275A (en) * 1974-07-25 1976-02-04 Fujitsu Ltd Handotaisochino seizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110266A (en) * 1980-02-04 1981-09-01 Fujitsu Ltd Manufacture of semiconductor device
JPS57155776A (en) * 1981-03-23 1982-09-25 Hitachi Ltd Mos semiconductor device and manufacture thereof
US8460734B2 (en) 2004-03-25 2013-06-11 San-Ei Gen F.F.I., Inc. Method of modifying gum arabic, modified gum arabic obtained by the method, and use thereof

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