JPS5225564A - Semiconductor thin-film monocrystal - Google Patents

Semiconductor thin-film monocrystal

Info

Publication number
JPS5225564A
JPS5225564A JP10122975A JP10122975A JPS5225564A JP S5225564 A JPS5225564 A JP S5225564A JP 10122975 A JP10122975 A JP 10122975A JP 10122975 A JP10122975 A JP 10122975A JP S5225564 A JPS5225564 A JP S5225564A
Authority
JP
Japan
Prior art keywords
semiconductor thin
monocrystal
film
film monocrystal
crystal grain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10122975A
Other languages
Japanese (ja)
Inventor
Nobuo Miyamoto
Tetsu Ooi
Nobuo Kodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10122975A priority Critical patent/JPS5225564A/en
Publication of JPS5225564A publication Critical patent/JPS5225564A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain the crystal grain of which short diameter is more than 1 mm and long diameter, more than 6 mm, by means of applying the zone-melt into two directions being crossed with the crystal grain which are already in existence as the core.
COPYRIGHT: (C)1977,JPO&Japio
JP10122975A 1975-08-22 1975-08-22 Semiconductor thin-film monocrystal Pending JPS5225564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10122975A JPS5225564A (en) 1975-08-22 1975-08-22 Semiconductor thin-film monocrystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10122975A JPS5225564A (en) 1975-08-22 1975-08-22 Semiconductor thin-film monocrystal

Publications (1)

Publication Number Publication Date
JPS5225564A true JPS5225564A (en) 1977-02-25

Family

ID=14295055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10122975A Pending JPS5225564A (en) 1975-08-22 1975-08-22 Semiconductor thin-film monocrystal

Country Status (1)

Country Link
JP (1) JPS5225564A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55100295A (en) * 1979-01-24 1980-07-31 Nippon Telegr & Teleph Corp <Ntt> Production of single crystal thin film
US4888302A (en) * 1987-11-25 1989-12-19 North American Philips Corporation Method of reduced stress recrystallization
US5217564A (en) * 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55100295A (en) * 1979-01-24 1980-07-31 Nippon Telegr & Teleph Corp <Ntt> Production of single crystal thin film
US5217564A (en) * 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US4888302A (en) * 1987-11-25 1989-12-19 North American Philips Corporation Method of reduced stress recrystallization

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