JPS55105334A - Method for surface treatment - Google Patents

Method for surface treatment

Info

Publication number
JPS55105334A
JPS55105334A JP1292279A JP1292279A JPS55105334A JP S55105334 A JPS55105334 A JP S55105334A JP 1292279 A JP1292279 A JP 1292279A JP 1292279 A JP1292279 A JP 1292279A JP S55105334 A JPS55105334 A JP S55105334A
Authority
JP
Japan
Prior art keywords
wafer
container
wall
light
sweeper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1292279A
Other languages
Japanese (ja)
Inventor
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1292279A priority Critical patent/JPS55105334A/en
Publication of JPS55105334A publication Critical patent/JPS55105334A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form a treating film instantaneously on the surface of a material by covering the surface of material to be treated by gas or liquid, illuminating it by light or particles, and reacting the surface of the material with the gaseous or liquid constituent. CONSTITUTION:An Si water 1 is attached to the inner wall of a container 2 by using vacuum chuck and the like, dried O2 is flown from an inlet port 3 of said container 2, amount of exhaustion from an output port 4 is controlled, and a specified pressure is indicated by a pressure gage 6. A wall of said container 2 opposing the wafer 1 is formed by glass, transparent reinforced resin, and the like, and a spot 50 of a laser beam is illuminated on said wall. That is, the light from an Ar ion laser 51 is finely focussed by a lens 52, and is swept and illuminated on the wafer 1 by way of a y-direction mirror sweeper 53 and an x-direction mirror sweeper 54. In this way, the surface of the wafer 1 and O2 are reacted in a very short time, and the desired SiO2 film can be obtained. Steam may be used instead of O2, and the film thickness can be freely controlled by adjusting the illumination of the laser light.
JP1292279A 1979-02-06 1979-02-06 Method for surface treatment Pending JPS55105334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1292279A JPS55105334A (en) 1979-02-06 1979-02-06 Method for surface treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1292279A JPS55105334A (en) 1979-02-06 1979-02-06 Method for surface treatment

Publications (1)

Publication Number Publication Date
JPS55105334A true JPS55105334A (en) 1980-08-12

Family

ID=11818818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1292279A Pending JPS55105334A (en) 1979-02-06 1979-02-06 Method for surface treatment

Country Status (1)

Country Link
JP (1) JPS55105334A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130930A (en) * 1980-03-18 1981-10-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61199638A (en) * 1985-02-28 1986-09-04 Sony Corp Method for formation of insulating film
JPS61280621A (en) * 1985-04-10 1986-12-11 テキサス　インスツルメンツ　インコーポレイテツド Optochemical patterning system
JPS6271245A (en) * 1986-09-12 1987-04-01 Toshiba Corp Manufacture of semiconductor device
JPS6279627A (en) * 1985-09-30 1987-04-13 ジエ−ムス　エフ　キバンズ Reacting method for semiconductor material at high temperature
US5028560A (en) * 1988-06-21 1991-07-02 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130930A (en) * 1980-03-18 1981-10-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61199638A (en) * 1985-02-28 1986-09-04 Sony Corp Method for formation of insulating film
JPS61280621A (en) * 1985-04-10 1986-12-11 テキサス　インスツルメンツ　インコーポレイテツド Optochemical patterning system
JPS6279627A (en) * 1985-09-30 1987-04-13 ジエ−ムス　エフ　キバンズ Reacting method for semiconductor material at high temperature
JPS6271245A (en) * 1986-09-12 1987-04-01 Toshiba Corp Manufacture of semiconductor device
US5028560A (en) * 1988-06-21 1991-07-02 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor

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