JPS5538068A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5538068A
JPS5538068A JP11189578A JP11189578A JPS5538068A JP S5538068 A JPS5538068 A JP S5538068A JP 11189578 A JP11189578 A JP 11189578A JP 11189578 A JP11189578 A JP 11189578A JP S5538068 A JPS5538068 A JP S5538068A
Authority
JP
Japan
Prior art keywords
thickness
semiconductor substrate
laser beams
layer
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11189578A
Other languages
Japanese (ja)
Inventor
Hideo Otsuka
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP11189578A priority Critical patent/JPS5538068A/en
Publication of JPS5538068A publication Critical patent/JPS5538068A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form an oxide layer, which is not polluted by impurities, while automatically controlling the thickness of the layer, by irradiating laser beams on an exposed surface of a semiconductor substrate installed in an oxidation atmosphere. CONSTITUTION:A fixed stage 10 provided with a circulation water passage 8 and a vacuum chuck portion 9 is mounted into a chamber 7, to which an inflow port 1a and an outflow port 1b of atmosphere gas, an incident window 3 of laser beams 2, to which quartz glass is installed, and a photo-window 6a for measuring the thickness of an oxide film 5 formed on a surface of a semiconductor substrate 4 by means of an optical lauer thickness meter 6 in an ellipso-metric shape are disposed. Laser beams 2 radiated from an argon laser light source 11 with 50W output are focussed on the surface of the semiconductor substrate 4 by means of a lens 12, reflected at the desired angles by means of reflectors 13a, 13b and scanned. Thus, the oxide layer 5 is not polluted by impurities, the accuracy of the thickness of the oxide layer 5 is within 5% and the thickness of the layer is easily controlled.
JP11189578A 1978-09-12 1978-09-12 Preparation of semiconductor device Pending JPS5538068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11189578A JPS5538068A (en) 1978-09-12 1978-09-12 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11189578A JPS5538068A (en) 1978-09-12 1978-09-12 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5538068A true JPS5538068A (en) 1980-03-17

Family

ID=14572819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11189578A Pending JPS5538068A (en) 1978-09-12 1978-09-12 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5538068A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130930A (en) * 1980-03-18 1981-10-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56152541U (en) * 1980-04-14 1981-11-14
JPS61199638A (en) * 1985-02-28 1986-09-04 Sony Corp Method for formation of insulating film
JPS6271245A (en) * 1986-09-12 1987-04-01 Toshiba Corp Manufacture of semiconductor device
JPS63224234A (en) * 1987-03-13 1988-09-19 Nippon Denso Co Ltd Production of insulator thin film
JPH02189920A (en) * 1989-01-18 1990-07-25 Nec Corp Forming method for oxide film and oxidizing device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130930A (en) * 1980-03-18 1981-10-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56152541U (en) * 1980-04-14 1981-11-14
JPS61199638A (en) * 1985-02-28 1986-09-04 Sony Corp Method for formation of insulating film
JPS6271245A (en) * 1986-09-12 1987-04-01 Toshiba Corp Manufacture of semiconductor device
JPS63224234A (en) * 1987-03-13 1988-09-19 Nippon Denso Co Ltd Production of insulator thin film
JPH02189920A (en) * 1989-01-18 1990-07-25 Nec Corp Forming method for oxide film and oxidizing device

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