JPS55111128A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS55111128A JPS55111128A JP1883079A JP1883079A JPS55111128A JP S55111128 A JPS55111128 A JP S55111128A JP 1883079 A JP1883079 A JP 1883079A JP 1883079 A JP1883079 A JP 1883079A JP S55111128 A JPS55111128 A JP S55111128A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- ion
- laser beam
- impurity
- thermal oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 238000005468 ion implantation Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 239000006023 eutectic alloy Substances 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To enable to form an ohmic contact against a shallow impurity region of a semiconductor device with the laser beam application by a method wherein a shallowly damaged layer is made at the open part of an impurity region by an ion implantation, and a metallic wiring is performed and the laser beam is applied to it.
CONSTITUTION: A thermal oxidation film 2 on a Si substrate 1 is partially opened, using it as a mask an impurity diffusion layer 3 is formed, and an opening for a contact making is made on the thermal oxidation film. A damaged layer 5 is formed on the surface of a diffusion layer 3 by an ion implantation, applying an inert ion beam like Ar+, Si+ or an impurity ion which is identical in conductivity with the diffusion layer at the area of about 1016/cm2 and keeping the ion range in a part of the depth of the diffusion layer. Then after a wiring pattern 6 of about 0.5μm thickness is formed, exposed to a laser beam of several 10nsec pulse width and 1W2j/cm2 irradiation energy density, and an ohmic contact consisted of an eutectic alloy 8 is formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1883079A JPS55111128A (en) | 1979-02-20 | 1979-02-20 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1883079A JPS55111128A (en) | 1979-02-20 | 1979-02-20 | Manufacturing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55111128A true JPS55111128A (en) | 1980-08-27 |
Family
ID=11982474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1883079A Pending JPS55111128A (en) | 1979-02-20 | 1979-02-20 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55111128A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS566434A (en) * | 1979-06-28 | 1981-01-23 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS5683935A (en) * | 1979-12-12 | 1981-07-08 | Sony Corp | Formation of metal layer |
| JP2005223301A (en) * | 2003-06-24 | 2005-08-18 | Fuji Electric Device Technology Co Ltd | Manufacturing method of semiconductor device |
-
1979
- 1979-02-20 JP JP1883079A patent/JPS55111128A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS566434A (en) * | 1979-06-28 | 1981-01-23 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS5683935A (en) * | 1979-12-12 | 1981-07-08 | Sony Corp | Formation of metal layer |
| JP2005223301A (en) * | 2003-06-24 | 2005-08-18 | Fuji Electric Device Technology Co Ltd | Manufacturing method of semiconductor device |
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