JPS5664480A - Manufacture of semiconductor detector for radioactive ray - Google Patents

Manufacture of semiconductor detector for radioactive ray

Info

Publication number
JPS5664480A
JPS5664480A JP13949079A JP13949079A JPS5664480A JP S5664480 A JPS5664480 A JP S5664480A JP 13949079 A JP13949079 A JP 13949079A JP 13949079 A JP13949079 A JP 13949079A JP S5664480 A JPS5664480 A JP S5664480A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
substrate
alloy
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13949079A
Other languages
Japanese (ja)
Inventor
Noritada Sato
Masaya Yabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP13949079A priority Critical patent/JPS5664480A/en
Publication of JPS5664480A publication Critical patent/JPS5664480A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • H10F30/2955—Shallow PN junction radiation detectors

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain the titled detector without damaging the crystallizing property of the semiconductor by a method wherein a surface of the semiconductor is coated with metal or an alloy, the metal or the alloy is alloyed with the semiconductor by irradiating laser rays to the surface, and an impurity introducing region or an adhering region of an electrode and the semiconductor is formed into the semiconductor. CONSTITUTION:Au vapor 6 containing Sb evaporated by using resistance heating or electron beams is evaporated on a surface of P type Si substrate 1 having ultra- high resistivity in vacuum through a mask 7, and an alloy layer 8 of Au and Sb is formed. Al vapor 9 is similarly evaporated on the back of the substrate 1 through a mask 10, an Al layer 11 is made up, laser rays 12 such as ruby laser are uniformly irradiated onto both sides of the substrate 1, and these metallic layers 8, 11 are melted, and alloyed with the substrate 1. Thus, an N type layer 13 by Sb contained in Au of the layer 8 and a P<+> type layer 14 by Al in the layer 11 are each formed on the surface layer sections of the both sides of the substrate 1, and P<+>PN structure is made up. Surface barriers may be formed in place of the junction.
JP13949079A 1979-10-29 1979-10-29 Manufacture of semiconductor detector for radioactive ray Pending JPS5664480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13949079A JPS5664480A (en) 1979-10-29 1979-10-29 Manufacture of semiconductor detector for radioactive ray

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13949079A JPS5664480A (en) 1979-10-29 1979-10-29 Manufacture of semiconductor detector for radioactive ray

Publications (1)

Publication Number Publication Date
JPS5664480A true JPS5664480A (en) 1981-06-01

Family

ID=15246467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13949079A Pending JPS5664480A (en) 1979-10-29 1979-10-29 Manufacture of semiconductor detector for radioactive ray

Country Status (1)

Country Link
JP (1) JPS5664480A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548370B1 (en) 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
US6753212B2 (en) 1999-08-13 2004-06-22 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
US6878574B2 (en) 2002-01-17 2005-04-12 Sony Corporation Alloying method for a image display device using laser irradiation
US7078321B2 (en) * 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7456371B2 (en) 1999-08-18 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus and laser annealing method

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7179698B2 (en) 1999-08-13 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
US6753212B2 (en) 1999-08-13 2004-06-22 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
US7473622B2 (en) 1999-08-13 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and manufacturing method of a semiconductor device
US6974731B2 (en) 1999-08-13 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
US7456371B2 (en) 1999-08-18 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus and laser annealing method
US7338913B2 (en) 1999-08-18 2008-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US6548370B1 (en) 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
US7078321B2 (en) * 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7049227B2 (en) 2002-01-17 2006-05-23 Sony Corporation Method for alloying a wiring portion for a image display device
US7319052B2 (en) 2002-01-17 2008-01-15 Sony Corporation Alloying method, and wiring forming method, display device forming method, and image display unit fabricating method
US7011990B2 (en) 2002-01-17 2006-03-14 Sony Corporation Alloying method using laser irradiation for a light emitting device
US7008827B2 (en) 2002-01-17 2006-03-07 Sony Corporation Alloy method using laser irradiation
US6878574B2 (en) 2002-01-17 2005-04-12 Sony Corporation Alloying method for a image display device using laser irradiation

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