JPS6476774A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6476774A
JPS6476774A JP23231187A JP23231187A JPS6476774A JP S6476774 A JPS6476774 A JP S6476774A JP 23231187 A JP23231187 A JP 23231187A JP 23231187 A JP23231187 A JP 23231187A JP S6476774 A JPS6476774 A JP S6476774A
Authority
JP
Japan
Prior art keywords
layer
concentration
operating
deeper
vicinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23231187A
Other languages
Japanese (ja)
Inventor
Kazutaka Kamitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23231187A priority Critical patent/JPS6476774A/en
Publication of JPS6476774A publication Critical patent/JPS6476774A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain large output, improve high frequency characteristics, and restrain the irregularity of element characteristics, by arranging an operating layer having a specific gradient wherein concentration gradually increases from a surface, just under a gate electrode or in the vicinity of it, and making source.drain region except this a high concentration layer which is not deeper than the operating layer. CONSTITUTION:On a GaAs semiinsulative substrate 1, an N-type high concentration operating layer 2 in the range of 3-10X10<17>cm<-3> is formed to have a desired threshold voltage. Then an N-type low concentration operating layer 3 in the range of 1-7X10<16>cm<-3> in the vicinity of the surface is grown in thickness ranging from 200 to 2000Angstrom , and an epitaxial layer having a specific step-wise concentration distribution is formed. A high melting refractory metal, e.g., WSix is stuck, and a gate electrode 5 of shot junction is formed. An N-type high concentration region 4 is formed, which is deeper than the layer 3 and shallower than the layer 2, and the concentration is higher than the layer 3. While the step-wise concentration distribution of the layers 2, 3 is almost kept, the layer 4 can be formed in a self-alignment manner, and then low resistance metal 6 can be selectively formed in a body. Therefore, parasitic resistance reduction and gate junction capacitance reduction can be simultaneously attained.
JP23231187A 1987-09-18 1987-09-18 Semiconductor device Pending JPS6476774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23231187A JPS6476774A (en) 1987-09-18 1987-09-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23231187A JPS6476774A (en) 1987-09-18 1987-09-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6476774A true JPS6476774A (en) 1989-03-22

Family

ID=16937213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23231187A Pending JPS6476774A (en) 1987-09-18 1987-09-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6476774A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5141222A (en) * 1989-05-26 1992-08-25 Seiko Epson Corporation Process including multiple sheet discharge printer using electrophotographic receivers with a pivotal sorter guide
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact
JPH09181094A (en) * 1995-12-26 1997-07-11 Nec Corp Field effect transistor and method of manufacturing the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414174A (en) * 1977-07-04 1979-02-02 Nec Corp Manufacture for semiconductor device
JPS551122A (en) * 1978-06-16 1980-01-07 Mitsubishi Electric Corp Field-effect transistor
JPS5546555A (en) * 1978-09-28 1980-04-01 Mitsubishi Electric Corp Semiconductor device
JPS55123172A (en) * 1979-03-15 1980-09-22 Nec Corp Schottky-barrier-gate field-effect transistor
JPS5624979A (en) * 1979-08-08 1981-03-10 Nec Corp Field effect transistor
JPS5963767A (en) * 1982-10-04 1984-04-11 Oki Electric Ind Co Ltd Semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414174A (en) * 1977-07-04 1979-02-02 Nec Corp Manufacture for semiconductor device
JPS551122A (en) * 1978-06-16 1980-01-07 Mitsubishi Electric Corp Field-effect transistor
JPS5546555A (en) * 1978-09-28 1980-04-01 Mitsubishi Electric Corp Semiconductor device
JPS55123172A (en) * 1979-03-15 1980-09-22 Nec Corp Schottky-barrier-gate field-effect transistor
JPS5624979A (en) * 1979-08-08 1981-03-10 Nec Corp Field effect transistor
JPS5963767A (en) * 1982-10-04 1984-04-11 Oki Electric Ind Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5141222A (en) * 1989-05-26 1992-08-25 Seiko Epson Corporation Process including multiple sheet discharge printer using electrophotographic receivers with a pivotal sorter guide
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact
JPH09181094A (en) * 1995-12-26 1997-07-11 Nec Corp Field effect transistor and method of manufacturing the same

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