JPS551126A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS551126A JPS551126A JP7375878A JP7375878A JPS551126A JP S551126 A JPS551126 A JP S551126A JP 7375878 A JP7375878 A JP 7375878A JP 7375878 A JP7375878 A JP 7375878A JP S551126 A JPS551126 A JP S551126A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recess
- sio
- layer
- epilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 229910052681 coesite Inorganic materials 0.000 abstract 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 229910052682 stishovite Inorganic materials 0.000 abstract 6
- 229910052905 tridymite Inorganic materials 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 238000000926 separation method Methods 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To prevent the production of bird peak and a horizontal oxidation, by implanting ions into an Si3N4 film through recess on the film and an SiO2 film, removing the Si3N4 film part on the bottom a of the recess and producing a separation oxide film.
CONSTITUTION: A polysilicon film 14, an Si3N4 film 5 and an SiO2 film 6 are overlapped on an epilayer 3 of a P-type substate having an N+ embedded layer. An opening is provided through these films. A recess is provided on the epilayer 3. The recess is coated with an SiO2 film 15. The edge part of the film 5 is etched by utilizing the films 6, 15. After the film 6 is etched, an SiO2 film 16 and an Si3N4 film 17 are grown. Boron is implanted into the film 17 perpendicularly to the substrate. The part of the film 17 on the bottom of the recess but is etched away the part of the film 17 on the wall of the recess is left as it is. The part of the film 16 on the bottom of the recess is then etched away. Boron is implanted into the epilayer 3 so that a P-layer 18 is produced. A separation layer 8 is produced by oxidation so that the epilayer is connected to the embedded layer. This results preventing the production of bird head. An SiO2 film 19 is produced during said oxidation. After the films 19, 5 are removed, an SiO2 film is made on the layer 3. An integrated circuit is thereafter formed by a conventional treatment. According to this method, the surface of the assembly is flattened and the separation layer 8 does not expand horizontally.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7375878A JPS551126A (en) | 1978-06-20 | 1978-06-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7375878A JPS551126A (en) | 1978-06-20 | 1978-06-20 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS551126A true JPS551126A (en) | 1980-01-07 |
| JPS6241418B2 JPS6241418B2 (en) | 1987-09-02 |
Family
ID=13527445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7375878A Granted JPS551126A (en) | 1978-06-20 | 1978-06-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS551126A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57205731A (en) * | 1981-06-12 | 1982-12-16 | Konishiroku Photo Ind Co Ltd | Winder for photographic paper |
| JPS63297040A (en) * | 1987-05-29 | 1988-12-05 | Process Rabo Micron:Kk | Production and device of ps plate for screen printing |
-
1978
- 1978-06-20 JP JP7375878A patent/JPS551126A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57205731A (en) * | 1981-06-12 | 1982-12-16 | Konishiroku Photo Ind Co Ltd | Winder for photographic paper |
| JPS63297040A (en) * | 1987-05-29 | 1988-12-05 | Process Rabo Micron:Kk | Production and device of ps plate for screen printing |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6241418B2 (en) | 1987-09-02 |
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