JPS55118631A - Diffusion furnace for treatment of semiconductor wafer - Google Patents

Diffusion furnace for treatment of semiconductor wafer

Info

Publication number
JPS55118631A
JPS55118631A JP2561579A JP2561579A JPS55118631A JP S55118631 A JPS55118631 A JP S55118631A JP 2561579 A JP2561579 A JP 2561579A JP 2561579 A JP2561579 A JP 2561579A JP S55118631 A JPS55118631 A JP S55118631A
Authority
JP
Japan
Prior art keywords
holder
wafer
heat treatment
diffusion furnace
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2561579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6250970B2 (2
Inventor
Hiroyuki Ino
Mikio Takagi
Haruo Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2561579A priority Critical patent/JPS55118631A/ja
Publication of JPS55118631A publication Critical patent/JPS55118631A/ja
Publication of JPS6250970B2 publication Critical patent/JPS6250970B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Furnace Charging Or Discharging (AREA)
JP2561579A 1979-03-07 1979-03-07 Diffusion furnace for treatment of semiconductor wafer Granted JPS55118631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2561579A JPS55118631A (en) 1979-03-07 1979-03-07 Diffusion furnace for treatment of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2561579A JPS55118631A (en) 1979-03-07 1979-03-07 Diffusion furnace for treatment of semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS55118631A true JPS55118631A (en) 1980-09-11
JPS6250970B2 JPS6250970B2 (2) 1987-10-28

Family

ID=12170782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2561579A Granted JPS55118631A (en) 1979-03-07 1979-03-07 Diffusion furnace for treatment of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS55118631A (2)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875840A (ja) * 1981-10-30 1983-05-07 Fujitsu Ltd 半導体用加熱処理炉
JPS60111037U (ja) * 1983-12-28 1985-07-27 株式会社　デンコ− 縦形半導体熱処理炉
JPS6192049U (2) * 1984-11-21 1986-06-14
JPS6211224A (ja) * 1986-07-18 1987-01-20 Hitachi Ltd 半導体ウエハの熱処理方法
JPS63102225A (ja) * 1986-10-20 1988-05-07 Deisuko Haitetsuku:Kk 縦形半導体熱処理装置のウエ−ハボ−ト
JPH0193724U (2) * 1987-12-14 1989-06-20
KR200451640Y1 (ko) * 2007-10-31 2010-12-28 어플라이드 머티어리얼스, 인코포레이티드 고온 인출용 블레이드
US8382180B2 (en) 2007-10-31 2013-02-26 Applied Material, Inc. Advanced FI blade for high temperature extraction

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62292490A (ja) * 1986-06-12 1987-12-19 Toppan Moore Co Ltd 転写方法
JPS6321187A (ja) * 1986-07-15 1988-01-28 Toppan Moore Co Ltd 転写シ−トの作製方法
JPS6321188A (ja) * 1986-07-15 1988-01-28 Toppan Moore Co Ltd 転写方法
US20250029848A1 (en) * 2021-12-02 2025-01-23 Acm Research (Shanghai), Inc. High-temperature tube furnace

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US62318A (en) * 1867-02-26 James b
JPS4710730U (2) * 1971-03-03 1972-10-07
US3836392A (en) * 1971-07-07 1974-09-17 Sandvik Ab Process for increasing the resistance to wear of the surface of hard metal cemented carbide parts subject to wear
JPS5213778A (en) * 1975-07-23 1977-02-02 Toshiba Corp Plasma-etching method
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US62318A (en) * 1867-02-26 James b
JPS4710730U (2) * 1971-03-03 1972-10-07
US3836392A (en) * 1971-07-07 1974-09-17 Sandvik Ab Process for increasing the resistance to wear of the surface of hard metal cemented carbide parts subject to wear
JPS5213778A (en) * 1975-07-23 1977-02-02 Toshiba Corp Plasma-etching method
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875840A (ja) * 1981-10-30 1983-05-07 Fujitsu Ltd 半導体用加熱処理炉
JPS60111037U (ja) * 1983-12-28 1985-07-27 株式会社　デンコ− 縦形半導体熱処理炉
JPS6192049U (2) * 1984-11-21 1986-06-14
JPS6211224A (ja) * 1986-07-18 1987-01-20 Hitachi Ltd 半導体ウエハの熱処理方法
JPS63102225A (ja) * 1986-10-20 1988-05-07 Deisuko Haitetsuku:Kk 縦形半導体熱処理装置のウエ−ハボ−ト
JPH0193724U (2) * 1987-12-14 1989-06-20
KR200451640Y1 (ko) * 2007-10-31 2010-12-28 어플라이드 머티어리얼스, 인코포레이티드 고온 인출용 블레이드
US8382180B2 (en) 2007-10-31 2013-02-26 Applied Material, Inc. Advanced FI blade for high temperature extraction

Also Published As

Publication number Publication date
JPS6250970B2 (2) 1987-10-28

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