JPS55121669A - Method of forming inactive layer on integrated circuit device having substrate of semiconductor material - Google Patents

Method of forming inactive layer on integrated circuit device having substrate of semiconductor material

Info

Publication number
JPS55121669A
JPS55121669A JP2787680A JP2787680A JPS55121669A JP S55121669 A JPS55121669 A JP S55121669A JP 2787680 A JP2787680 A JP 2787680A JP 2787680 A JP2787680 A JP 2787680A JP S55121669 A JPS55121669 A JP S55121669A
Authority
JP
Japan
Prior art keywords
substrate
integrated circuit
semiconductor material
circuit device
inactive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2787680A
Other languages
English (en)
Japanese (ja)
Inventor
Arubaato Burumenfuerud Maachin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS55121669A publication Critical patent/JPS55121669A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2787680A 1979-03-05 1980-03-04 Method of forming inactive layer on integrated circuit device having substrate of semiconductor material Pending JPS55121669A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1710079A 1979-03-05 1979-03-05

Publications (1)

Publication Number Publication Date
JPS55121669A true JPS55121669A (en) 1980-09-18

Family

ID=21780714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2787680A Pending JPS55121669A (en) 1979-03-05 1980-03-04 Method of forming inactive layer on integrated circuit device having substrate of semiconductor material

Country Status (7)

Country Link
JP (1) JPS55121669A (it)
DE (1) DE3007500A1 (it)
FR (1) FR2451103A1 (it)
GB (1) GB2044533B (it)
IT (1) IT1140645B (it)
NL (1) NL8001310A (it)
YU (1) YU61180A (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088246A (ja) * 1994-06-21 1996-01-12 Nippon Motorola Ltd 半導体装置の金属配線形成方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
JPS581878A (ja) * 1981-06-26 1983-01-07 Fujitsu Ltd 磁気バブルメモリ素子の製造方法
DE3130666A1 (de) * 1981-08-03 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen integrieter mos-feldeffekttransistoren mit einer phosphorsilikatglasschicht als zwischenoxidschicht
DE3131050A1 (de) * 1981-08-05 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren unter verwendung einer aus phosphorsilikatglas bestehenden obewrflaechenschicht auf dem zwischenoxid zwischen polysiliziumebene und metall-leiterbahnebene
DE3133516A1 (de) * 1981-08-25 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum verrunden des zwischenoxids zwischen polysiliziumebene und metall-leiterbahnebene beim herstellen von integrierten n-kanal-mos-feldeffekttransistoren
JPS5898934A (ja) * 1981-12-08 1983-06-13 Matsushita Electronics Corp 半導体装置の製造方法
US4686000A (en) * 1985-04-02 1987-08-11 Heath Barbara A Self-aligned contact process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3627598A (en) * 1970-02-05 1971-12-14 Fairchild Camera Instr Co Nitride passivation of mesa transistors by phosphovapox lifting
US3917495A (en) * 1970-06-01 1975-11-04 Gen Electric Method of making improved planar devices including oxide-nitride composite layer
US3943621A (en) * 1974-03-25 1976-03-16 General Electric Company Semiconductor device and method of manufacture therefor
US4005240A (en) * 1975-03-10 1977-01-25 Aeronutronic Ford Corporation Germanium device passivation
US4273805A (en) * 1978-06-19 1981-06-16 Rca Corporation Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088246A (ja) * 1994-06-21 1996-01-12 Nippon Motorola Ltd 半導体装置の金属配線形成方法

Also Published As

Publication number Publication date
IT1140645B (it) 1986-10-01
YU61180A (en) 1983-02-28
IT8020023A1 (it) 1981-08-19
IT8020023A0 (it) 1980-02-19
GB2044533B (en) 1983-12-14
DE3007500A1 (de) 1980-09-18
FR2451103A1 (fr) 1980-10-03
NL8001310A (nl) 1980-09-09
GB2044533A (en) 1980-10-15

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