JPS55140228A - Method for formation of pattern - Google Patents

Method for formation of pattern

Info

Publication number
JPS55140228A
JPS55140228A JP4794679A JP4794679A JPS55140228A JP S55140228 A JPS55140228 A JP S55140228A JP 4794679 A JP4794679 A JP 4794679A JP 4794679 A JP4794679 A JP 4794679A JP S55140228 A JPS55140228 A JP S55140228A
Authority
JP
Japan
Prior art keywords
resist
pattern
electron beam
electron
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4794679A
Other languages
Japanese (ja)
Inventor
Nobuo Miyamoto
Kozo Mochiji
Yoji Maruyama
Shojiro Asai
Shinji Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4794679A priority Critical patent/JPS55140228A/en
Publication of JPS55140228A publication Critical patent/JPS55140228A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a highly accurate pattern quickly, by providing a resinous film, which is not sensitive to photosensitive resist or an electron beam, on a substrate; stacking electron-beam sensitive resist thereon; emitting the electron beam; and by removing the resist remained on a pattern together with the photosensitive resist or resin. CONSTITUTION:Positive photosensitive resist 1 is applied on the surface of a substrate 3. The thickness of about 0.1-0.5mum is selected depending on he scanning pitch of an electron beam and the desired accuracy of a pattern. After the burning, printing is made by exposure 11, and electron-beam sensitive resist is applied to the thickness of about 0.1-1mum under the same consideration. After the burning, an electron beam 4 is emitted with the scanning distance being expanded than that in the previous process. When the resist 2 is developed, a portion is remained between the scanning lines. Then, the exposed resist 1 on the pattern is melted and removed together with the remaining resist 2. The expansion of the size of the pattern due to the increase in the number of the scanning lines can be reduced. The expansion of the size due to the side etching of the resist 1 can be prevented by adjusting the amount of emittance of the electron beam. In this way, decrease in accuracy can be prevented and the describing time can be shortened.
JP4794679A 1979-04-20 1979-04-20 Method for formation of pattern Pending JPS55140228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4794679A JPS55140228A (en) 1979-04-20 1979-04-20 Method for formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4794679A JPS55140228A (en) 1979-04-20 1979-04-20 Method for formation of pattern

Publications (1)

Publication Number Publication Date
JPS55140228A true JPS55140228A (en) 1980-11-01

Family

ID=12789524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4794679A Pending JPS55140228A (en) 1979-04-20 1979-04-20 Method for formation of pattern

Country Status (1)

Country Link
JP (1) JPS55140228A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842229A (en) * 1981-09-07 1983-03-11 Fujitsu Ltd Resist pattern formation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114676A (en) * 1977-03-17 1978-10-06 Toshiba Corp Electron beam exposure method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114676A (en) * 1977-03-17 1978-10-06 Toshiba Corp Electron beam exposure method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842229A (en) * 1981-09-07 1983-03-11 Fujitsu Ltd Resist pattern formation

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