JPS55143047A - Insulating separation method for semiconductor device - Google Patents

Insulating separation method for semiconductor device

Info

Publication number
JPS55143047A
JPS55143047A JP5123279A JP5123279A JPS55143047A JP S55143047 A JPS55143047 A JP S55143047A JP 5123279 A JP5123279 A JP 5123279A JP 5123279 A JP5123279 A JP 5123279A JP S55143047 A JPS55143047 A JP S55143047A
Authority
JP
Japan
Prior art keywords
film
region
channel
films
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5123279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6228579B2 (2
Inventor
Nobuhiro Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5123279A priority Critical patent/JPS55143047A/ja
Publication of JPS55143047A publication Critical patent/JPS55143047A/ja
Publication of JPS6228579B2 publication Critical patent/JPS6228579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP5123279A 1979-04-25 1979-04-25 Insulating separation method for semiconductor device Granted JPS55143047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5123279A JPS55143047A (en) 1979-04-25 1979-04-25 Insulating separation method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5123279A JPS55143047A (en) 1979-04-25 1979-04-25 Insulating separation method for semiconductor device

Publications (2)

Publication Number Publication Date
JPS55143047A true JPS55143047A (en) 1980-11-08
JPS6228579B2 JPS6228579B2 (2) 1987-06-22

Family

ID=12881191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5123279A Granted JPS55143047A (en) 1979-04-25 1979-04-25 Insulating separation method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS55143047A (2)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972740A (ja) * 1982-10-19 1984-04-24 Nec Corp 半導体集積回路装置およびその製造方法
JPS6083348A (ja) * 1983-10-14 1985-05-11 Hitachi Ltd 半導体集積回路装置
US4968640A (en) * 1987-02-10 1990-11-06 Industrial Technology Research Institute Isolation structures for integrated circuits
JPH04116932A (ja) * 1990-09-07 1992-04-17 Mitsubishi Electric Corp 半導体装置
US5348910A (en) * 1991-12-24 1994-09-20 Seiko Epson Corporation Method of manufacturing a semiconductor device and the product thereby

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142982A (en) * 1975-05-05 1976-12-08 Intel Corp Method of producing single crystal silicon ic

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142982A (en) * 1975-05-05 1976-12-08 Intel Corp Method of producing single crystal silicon ic

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972740A (ja) * 1982-10-19 1984-04-24 Nec Corp 半導体集積回路装置およびその製造方法
JPS6083348A (ja) * 1983-10-14 1985-05-11 Hitachi Ltd 半導体集積回路装置
US4968640A (en) * 1987-02-10 1990-11-06 Industrial Technology Research Institute Isolation structures for integrated circuits
JPH04116932A (ja) * 1990-09-07 1992-04-17 Mitsubishi Electric Corp 半導体装置
US5348910A (en) * 1991-12-24 1994-09-20 Seiko Epson Corporation Method of manufacturing a semiconductor device and the product thereby

Also Published As

Publication number Publication date
JPS6228579B2 (2) 1987-06-22

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