JPS5772344A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5772344A
JPS5772344A JP55148363A JP14836380A JPS5772344A JP S5772344 A JPS5772344 A JP S5772344A JP 55148363 A JP55148363 A JP 55148363A JP 14836380 A JP14836380 A JP 14836380A JP S5772344 A JPS5772344 A JP S5772344A
Authority
JP
Japan
Prior art keywords
film
mask
layer
oxidation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55148363A
Other languages
Japanese (ja)
Other versions
JPS5837990B2 (en
Inventor
Hisahiro Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55148363A priority Critical patent/JPS5837990B2/en
Priority to US06/313,324 priority patent/US4419142A/en
Publication of JPS5772344A publication Critical patent/JPS5772344A/en
Publication of JPS5837990B2 publication Critical patent/JPS5837990B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To prevent occurrence of oxidation inducing layer fault and improve reliability and yield, by forming an oxide film by oxidizing a rapid oxidizing material layer on a region, in which an element is scheduled to be formed, using an oxidation-resisting maks as the mask. CONSTITUTION:A thermally oxidized film 2 is formed on the surface of a semiconductor substrate 1, and a polycrystalline silicon layer 3 which can be quickly oxidized is formed on the film 2. After a silicon nitride film is attached by gaseous phase growth, the layer 3 is selectively oxidized by patterning and using the remaining silicon nitride film 4 as an oxidation-resisting mask. And, by oxidizing the layer 3, an oxide film 6 whose film thickness is approximately 9,000Angstrom is formed. And then, by removing the mask 4 and conducting ion injection with the film 6 as a mask, an impurity of the same electric conduction type as the substrate 1 is formed as a channel stopper 5. And then, the film 6 is removed, and an oxide film 7 which penetrated into the substrate 1 is also removed. And then, by providing a series of treatments on the substrate 1 including oxidation and dispersion, etc., a semiconductor element, such as MOSFET and bipolar transistor, etc. is formed.
JP55148363A 1980-10-24 1980-10-24 Manufacturing method of semiconductor device Expired JPS5837990B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55148363A JPS5837990B2 (en) 1980-10-24 1980-10-24 Manufacturing method of semiconductor device
US06/313,324 US4419142A (en) 1980-10-24 1981-10-20 Method of forming dielectric isolation of device regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148363A JPS5837990B2 (en) 1980-10-24 1980-10-24 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5772344A true JPS5772344A (en) 1982-05-06
JPS5837990B2 JPS5837990B2 (en) 1983-08-19

Family

ID=15451082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148363A Expired JPS5837990B2 (en) 1980-10-24 1980-10-24 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5837990B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106134A (en) * 1982-12-08 1984-06-19 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Method of producing semiconductor device
JPH047875A (en) * 1990-04-25 1992-01-13 Nec Corp Manufacture of semiconductor element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267983U (en) * 1985-10-19 1987-04-28

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106134A (en) * 1982-12-08 1984-06-19 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Method of producing semiconductor device
JPH047875A (en) * 1990-04-25 1992-01-13 Nec Corp Manufacture of semiconductor element

Also Published As

Publication number Publication date
JPS5837990B2 (en) 1983-08-19

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