JPS5515023A - Measuring method for etching speed of thin film - Google Patents

Measuring method for etching speed of thin film

Info

Publication number
JPS5515023A
JPS5515023A JP8753678A JP8753678A JPS5515023A JP S5515023 A JPS5515023 A JP S5515023A JP 8753678 A JP8753678 A JP 8753678A JP 8753678 A JP8753678 A JP 8753678A JP S5515023 A JPS5515023 A JP S5515023A
Authority
JP
Japan
Prior art keywords
thin film
film
silicon
etching speed
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8753678A
Other languages
Japanese (ja)
Inventor
Yukio Takeda
Takeshige Ichimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP8753678A priority Critical patent/JPS5515023A/en
Publication of JPS5515023A publication Critical patent/JPS5515023A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To measure the etching speed of a thin film by forming previously a silicon oxide film on a silicon wafer and growing the measured thin film on this film.
CONSTITUTION: Silicon oxide film 12 of approximately 1000 to 1200 Å is formed previously on silicon wafer 11, and measured thin film 13 is formed into a prescribed arbitrary thickness on this film 12. Measured thin film 13 is a silicon nitride film mainly, but an aluminum oxide film, a silicon film, etc., may be used. Thin film 13 grown on silicon oxide film 12 in this manner is etched with etching liquid such as fluoric acid, and the time required for etching-out is measured, and the etching speed is calculated on a basis of the relation to the thin film.
COPYRIGHT: (C)1980,JPO&Japio
JP8753678A 1978-07-18 1978-07-18 Measuring method for etching speed of thin film Pending JPS5515023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8753678A JPS5515023A (en) 1978-07-18 1978-07-18 Measuring method for etching speed of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8753678A JPS5515023A (en) 1978-07-18 1978-07-18 Measuring method for etching speed of thin film

Publications (1)

Publication Number Publication Date
JPS5515023A true JPS5515023A (en) 1980-02-01

Family

ID=13917700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8753678A Pending JPS5515023A (en) 1978-07-18 1978-07-18 Measuring method for etching speed of thin film

Country Status (1)

Country Link
JP (1) JPS5515023A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63191348U (en) * 1987-05-27 1988-12-09

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63191348U (en) * 1987-05-27 1988-12-09

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