JPS55156353A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55156353A
JPS55156353A JP6384479A JP6384479A JPS55156353A JP S55156353 A JPS55156353 A JP S55156353A JP 6384479 A JP6384479 A JP 6384479A JP 6384479 A JP6384479 A JP 6384479A JP S55156353 A JPS55156353 A JP S55156353A
Authority
JP
Japan
Prior art keywords
voltage
leakage current
diode
reverse
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6384479A
Other languages
Japanese (ja)
Inventor
Toshiyuki Hidaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6384479A priority Critical patent/JPS55156353A/en
Publication of JPS55156353A publication Critical patent/JPS55156353A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Electronic Switches (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To equally share in voltage in the diode serial circuit by forming two reverse characteristic regions using pellets of the different reverse leakage currents. CONSTITUTION:A diode DA having small reverse leakage voltage and a diode DB having large same voltage are connected in series. In this event, when the reverse voltage VR is less than avalanche voltage VZP of the diode DA, the leakage current is controlled by the characteristic of DA and the leakage current as a whole is equally small as DA. When the voltage VZP is exceeded, the leakage current is controlled by DB and the leakage current more than the reverse characteristic of the diode DB does not flow. In case the voltage VR is further increased, the avalanche current comes to all over flow. In this way, by changing the reverse characteristic of the pellet, the DC share in the voltage is equalized thus to prevent the element from breakage, when the diodes are connected is series. The pellets having large and small leakage current are better to be arranged by turns and in considering of the voltage sharing in the high frequency working, a small leakage current element is better to be arranged on a cathode side.
JP6384479A 1979-05-25 1979-05-25 Semiconductor device Pending JPS55156353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6384479A JPS55156353A (en) 1979-05-25 1979-05-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6384479A JPS55156353A (en) 1979-05-25 1979-05-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55156353A true JPS55156353A (en) 1980-12-05

Family

ID=13241039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6384479A Pending JPS55156353A (en) 1979-05-25 1979-05-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55156353A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815365U (en) * 1981-07-23 1983-01-31 新電元工業株式会社 semiconductor equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50158284A (en) * 1974-06-10 1975-12-22
JPS5158870A (en) * 1974-11-18 1976-05-22 Sanken Electric Co Ltd Seiryunoizuogenshoshita handotaiseiryusochi

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50158284A (en) * 1974-06-10 1975-12-22
JPS5158870A (en) * 1974-11-18 1976-05-22 Sanken Electric Co Ltd Seiryunoizuogenshoshita handotaiseiryusochi

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815365U (en) * 1981-07-23 1983-01-31 新電元工業株式会社 semiconductor equipment

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