JPS5472984A - Semiconductor rectifier - Google Patents

Semiconductor rectifier

Info

Publication number
JPS5472984A
JPS5472984A JP13984777A JP13984777A JPS5472984A JP S5472984 A JPS5472984 A JP S5472984A JP 13984777 A JP13984777 A JP 13984777A JP 13984777 A JP13984777 A JP 13984777A JP S5472984 A JPS5472984 A JP S5472984A
Authority
JP
Japan
Prior art keywords
pellet
killer
junction
time
dummy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13984777A
Other languages
Japanese (ja)
Inventor
Norihiro Kawauchi
Toshiyuki Hidaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13984777A priority Critical patent/JPS5472984A/en
Publication of JPS5472984A publication Critical patent/JPS5472984A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce noises with a forward-current recovery time made long by diffusing a killer to a dummy pellet whrer no PN junction is formed without diffusing the life time killer to a pellet with a PN junction and by connecting it in series to the PN junction pellet.
CONSTITUTION: Semiconductor pellets 3 with a PN junction formed are connected in series, and sndwiched between electrodes 2 fitted with lead line 1 to constitute the current unit. At this time, a life-time killer is not diffused to pellet 3 and dummy pellets 4 to which a killer such as Pt and Au has been diffused are fixed to both the side of lamination pellet 3. At this time, dummy pellet 4 when employing a P- type Si pellet gains more effect of prolonging a recovery time in terms of mobility. As a result, there is no need to insert a seies resistance into the semiconductor element, no dispersion of characteristics appears because of no killer diffusion of the PN-junction pellet, and the voltage drop is also reduced.
COPYRIGHT: (C)1979,JPO&Japio
JP13984777A 1977-11-24 1977-11-24 Semiconductor rectifier Pending JPS5472984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13984777A JPS5472984A (en) 1977-11-24 1977-11-24 Semiconductor rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13984777A JPS5472984A (en) 1977-11-24 1977-11-24 Semiconductor rectifier

Publications (1)

Publication Number Publication Date
JPS5472984A true JPS5472984A (en) 1979-06-11

Family

ID=15254902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13984777A Pending JPS5472984A (en) 1977-11-24 1977-11-24 Semiconductor rectifier

Country Status (1)

Country Link
JP (1) JPS5472984A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917276A (en) * 1982-07-20 1984-01-28 Hitachi Ltd Semiconductor device
JPS6197858U (en) * 1984-12-04 1986-06-23
CN102637596A (en) * 2011-03-22 2012-08-15 南通皋鑫电子股份有限公司 Method for manufacturing high-frequency high-voltage diode by use of czochralski silicon wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917276A (en) * 1982-07-20 1984-01-28 Hitachi Ltd Semiconductor device
JPS6197858U (en) * 1984-12-04 1986-06-23
CN102637596A (en) * 2011-03-22 2012-08-15 南通皋鑫电子股份有限公司 Method for manufacturing high-frequency high-voltage diode by use of czochralski silicon wafer

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