JPS55156353A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55156353A JPS55156353A JP6384479A JP6384479A JPS55156353A JP S55156353 A JPS55156353 A JP S55156353A JP 6384479 A JP6384479 A JP 6384479A JP 6384479 A JP6384479 A JP 6384479A JP S55156353 A JPS55156353 A JP S55156353A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- leakage current
- diode
- reverse
- small
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
Landscapes
- Electronic Switches (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6384479A JPS55156353A (en) | 1979-05-25 | 1979-05-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6384479A JPS55156353A (en) | 1979-05-25 | 1979-05-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55156353A true JPS55156353A (en) | 1980-12-05 |
Family
ID=13241039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6384479A Pending JPS55156353A (en) | 1979-05-25 | 1979-05-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55156353A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5815365U (ja) * | 1981-07-23 | 1983-01-31 | 新電元工業株式会社 | 半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50158284A (ja) * | 1974-06-10 | 1975-12-22 | ||
| JPS5158870A (en) * | 1974-11-18 | 1976-05-22 | Sanken Electric Co Ltd | Seiryunoizuogenshoshita handotaiseiryusochi |
-
1979
- 1979-05-25 JP JP6384479A patent/JPS55156353A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50158284A (ja) * | 1974-06-10 | 1975-12-22 | ||
| JPS5158870A (en) * | 1974-11-18 | 1976-05-22 | Sanken Electric Co Ltd | Seiryunoizuogenshoshita handotaiseiryusochi |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5815365U (ja) * | 1981-07-23 | 1983-01-31 | 新電元工業株式会社 | 半導体装置 |
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