JPS55165673A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55165673A
JPS55165673A JP7372179A JP7372179A JPS55165673A JP S55165673 A JPS55165673 A JP S55165673A JP 7372179 A JP7372179 A JP 7372179A JP 7372179 A JP7372179 A JP 7372179A JP S55165673 A JPS55165673 A JP S55165673A
Authority
JP
Japan
Prior art keywords
layer
base
type
base layer
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7372179A
Other languages
Japanese (ja)
Inventor
Mitsuo Hasegawa
Yoichiro Nabeshima
Hiroshi Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7372179A priority Critical patent/JPS55165673A/en
Publication of JPS55165673A publication Critical patent/JPS55165673A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the withstand voltage by forming the base layer of a laminate body of high and low concentration impurities when the base layer is provided on the collector layer and the emitter region is formed in the base layer to obtain an asymmetric diffused junction transistor. CONSTITUTION:The N-type layers 1 to be the collector region are formed on both sides of the P-type Si substrate 2 to be the base region by the diffusion method, and one side layer 1 is polished and removed. Next a P-type impurity is diffused from the surface of the exposed substrate 1 to form the P<+>-type base layer 2', the base layer wherein the layers 2 and 2' are laminated is obtained. After this, both sides of the substrate are coated with the SiO2 film 8, the aperture 9 is made in the layer 2' side and the N-type emitter region 3 is formed in the layer 2' by the diffusion method. Next the apertures are made in the SiO2 film 8' formed at this time and the left film 8 respectively, the Al electrodes 5, 6 are provided on respective regions and the electrode 4 is provided on the back of the layer 1, the groove 10 is shaped and a pellet is obtained by cutting the groove. In this way, the depletion layer from the base-collector junction is obstructed by the layer 2', the base-emitter junction 7 is not reached by the depletion layer, accordingly the withstanding voltage can be improved.
JP7372179A 1979-06-12 1979-06-12 Semiconductor device Pending JPS55165673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7372179A JPS55165673A (en) 1979-06-12 1979-06-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7372179A JPS55165673A (en) 1979-06-12 1979-06-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55165673A true JPS55165673A (en) 1980-12-24

Family

ID=13526363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7372179A Pending JPS55165673A (en) 1979-06-12 1979-06-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165673A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791928B2 (en) 2008-08-12 2010-09-07 International Business Machines Corporation Design structure, structure and method of using asymmetric junction engineered SRAM pass gates
US8036022B2 (en) 2008-08-12 2011-10-11 International Business Machines Corporation Structure and method of using asymmetric junction engineered SRAM pass gates, and design structure
JP2015204301A (en) * 2014-04-10 2015-11-16 三菱電機株式会社 Semiconductor device and manufacturing method of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791928B2 (en) 2008-08-12 2010-09-07 International Business Machines Corporation Design structure, structure and method of using asymmetric junction engineered SRAM pass gates
US8036022B2 (en) 2008-08-12 2011-10-11 International Business Machines Corporation Structure and method of using asymmetric junction engineered SRAM pass gates, and design structure
JP2015204301A (en) * 2014-04-10 2015-11-16 三菱電機株式会社 Semiconductor device and manufacturing method of semiconductor device
US9755037B2 (en) 2014-04-10 2017-09-05 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device

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