JPS55160421A - Method and device for thin film growth - Google Patents

Method and device for thin film growth

Info

Publication number: JPS55160421A
Authority: JP; Japan
Prior art keywords: substrate; molecular beam; thin film; room; prepared
Prior art date: 1979-05-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP6842679A

Other languages

English (en)

Japanese (ja)

Other versions

JPS63937B2 (2

Inventor

Tsuneo Tanaka

Seiichi Nagata

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Holdings Corp

Original Assignee

Matsushita Electric Industrial Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-05-31

Filing date

1979-05-31

Publication date

1980-12-13

1979-05-31 Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd

1979-05-31 Priority to JP6842679A priority Critical patent/JPS55160421A/ja

1980-12-13 Publication of JPS55160421A publication Critical patent/JPS55160421A/ja

1988-01-09 Publication of JPS63937B2 publication Critical patent/JPS63937B2/ja

Status Granted legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

Crystals, And After-Treatments Of Crystals (AREA)
Physical Vapour Deposition (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

JP6842679A 1979-05-31 1979-05-31 Method and device for thin film growth Granted JPS55160421A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP6842679A JPS55160421A (en)	1979-05-31	1979-05-31	Method and device for thin film growth

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP6842679A JPS55160421A (en)	1979-05-31	1979-05-31	Method and device for thin film growth

Publications (2)

Publication Number	Publication Date
JPS55160421A true JPS55160421A (en)	1980-12-13
JPS63937B2 JPS63937B2 (2)	1988-01-09

Family

ID=13373345

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP6842679A Granted JPS55160421A (en)	1979-05-31	1979-05-31	Method and device for thin film growth

Country Status (1)

Country	Link
JP (1)	JPS55160421A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS625631A (ja) *	1985-07-02	1987-01-12	Fujitsu Ltd	分子線結晶成長装置及び分子線結晶成長方法
WO1987000966A1 (en) *	1985-08-07	1987-02-12	The Commonwealth Of Australia	Control of uniformity of growing alloy film
AU592110B2 (en) *	1985-08-07	1990-01-04	Commonwealth Of Australia, The	Control of uniformity of growing alloy film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS51132977A (en) *	1975-05-14	1976-11-18	Matsushita Electric Ind Co Ltd	Junction-type field effect transistor process

1979
- 1979-05-31 JP JP6842679A patent/JPS55160421A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS51132977A (en) *	1975-05-14	1976-11-18	Matsushita Electric Ind Co Ltd	Junction-type field effect transistor process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS625631A (ja) *	1985-07-02	1987-01-12	Fujitsu Ltd	分子線結晶成長装置及び分子線結晶成長方法
WO1987000966A1 (en) *	1985-08-07	1987-02-12	The Commonwealth Of Australia	Control of uniformity of growing alloy film
US4770895A (en) *	1985-08-07	1988-09-13	The Commonwealth Of Australia	Control of uniformity of growing alloy film
AU592110B2 (en) *	1985-08-07	1990-01-04	Commonwealth Of Australia, The	Control of uniformity of growing alloy film
US4934313A (en) *	1985-08-07	1990-06-19	Commonwealth Of Australia	Control of uniformity of growing alloy film

Also Published As

Publication number	Publication date
JPS63937B2 (2)	1988-01-09

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