JPS54865A - Molecular beam crystal growing method - Google Patents

Molecular beam crystal growing method

Info

Publication number
JPS54865A
JPS54865A JP6594577A JP6594577A JPS54865A JP S54865 A JPS54865 A JP S54865A JP 6594577 A JP6594577 A JP 6594577A JP 6594577 A JP6594577 A JP 6594577A JP S54865 A JPS54865 A JP S54865A
Authority
JP
Japan
Prior art keywords
molecular beam
crystal growing
growing method
beam crystal
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6594577A
Other languages
Japanese (ja)
Inventor
Yasuo Seki
Tatsuo Fuji
Hisatsune Watanabe
Akira Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6594577A priority Critical patent/JPS54865A/en
Publication of JPS54865A publication Critical patent/JPS54865A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To secure an accurate control for the distribution of the impurity element in the film thickness direction, by changing one of several kinds of the molecular beams into the positive ion beam and also securing a control through irradiation of the electron beam onto the signle-crystal surface.
COPYRIGHT: (C)1979,JPO&Japio
JP6594577A 1977-06-03 1977-06-03 Molecular beam crystal growing method Pending JPS54865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6594577A JPS54865A (en) 1977-06-03 1977-06-03 Molecular beam crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6594577A JPS54865A (en) 1977-06-03 1977-06-03 Molecular beam crystal growing method

Publications (1)

Publication Number Publication Date
JPS54865A true JPS54865A (en) 1979-01-06

Family

ID=13301606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6594577A Pending JPS54865A (en) 1977-06-03 1977-06-03 Molecular beam crystal growing method

Country Status (1)

Country Link
JP (1) JPS54865A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622093A (en) * 1983-07-27 1986-11-11 At&T Bell Laboratories Method of selective area epitaxial growth using ion beams
JPH01270277A (en) * 1988-04-21 1989-10-27 Nec Corp Manufacture of gallium arsenide hyper abrupt varactor diode
DE102010036301B4 (en) 2010-07-08 2019-09-19 Dr. Ing. H.C. F. Porsche Aktiengesellschaft Device for implementing an actuation of an accelerator pedal in an operation of a throttle valve

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622093A (en) * 1983-07-27 1986-11-11 At&T Bell Laboratories Method of selective area epitaxial growth using ion beams
JPH01270277A (en) * 1988-04-21 1989-10-27 Nec Corp Manufacture of gallium arsenide hyper abrupt varactor diode
DE102010036301B4 (en) 2010-07-08 2019-09-19 Dr. Ing. H.C. F. Porsche Aktiengesellschaft Device for implementing an actuation of an accelerator pedal in an operation of a throttle valve

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