JPS551627A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS551627A JPS551627A JP7411278A JP7411278A JPS551627A JP S551627 A JPS551627 A JP S551627A JP 7411278 A JP7411278 A JP 7411278A JP 7411278 A JP7411278 A JP 7411278A JP S551627 A JPS551627 A JP S551627A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- drain
- transistor
- point
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
- H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To reduce the power consumption of a semiconductor memory by a constitution where sources of N-channel and P-channel MOS transistors are connected to each other and gates of them are connected to each other and the drain of one of them is connected to the other substrate. CONSTITUTION:Shallow D-type N-channel and P-channel MOS transistors Q1 and Q2 have sources and gates connected to each other respectively, and the drain of the N-channel transistor and the substrate of the P-channel transistor are connected, and the drain of the P-channel transistor and the substrate of the N-channel transistor are connected, and the drain of transistor Q1 and the drain of transistor Q2 are connected to input point K and output point A respectively, and point A is grounded. Transistors Q1 and Q2 have a conductive state in case of a low potential at input point K, and transistors Q1 and Q2 have a non-conductive state in case of a high potential at point K. Then, by using these facts, a memory device having two operation stable points can be constituted.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7411278A JPS551627A (en) | 1978-06-21 | 1978-06-21 | Semiconductor memory device |
| US06/254,117 US4384300A (en) | 1978-06-21 | 1981-04-14 | Negative resistance device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7411278A JPS551627A (en) | 1978-06-21 | 1978-06-21 | Semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS551627A true JPS551627A (en) | 1980-01-08 |
Family
ID=13537782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7411278A Pending JPS551627A (en) | 1978-06-21 | 1978-06-21 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS551627A (en) |
-
1978
- 1978-06-21 JP JP7411278A patent/JPS551627A/en active Pending
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