JPS5516486A - One-chip darlington transistor - Google Patents
One-chip darlington transistorInfo
- Publication number
- JPS5516486A JPS5516486A JP9025278A JP9025278A JPS5516486A JP S5516486 A JPS5516486 A JP S5516486A JP 9025278 A JP9025278 A JP 9025278A JP 9025278 A JP9025278 A JP 9025278A JP S5516486 A JPS5516486 A JP S5516486A
- Authority
- JP
- Japan
- Prior art keywords
- type layer
- emitter
- layer
- type
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent transistors from breakdown through allowing current to flow from emitter to collector at turn-off time by incorporating operation stabilizing resistances without forming collector-emitter reverse parallel diode. CONSTITUTION:A drive stage transistor is made up of n type silicon substrate 1 and P type layer 2, n type layer 3 and an output stage transistor of the said substrate 1 and P type layer 2, n type layer 4; there are arranged a common base layer 2 and an n type layer 8 having resistance at another spot, around which is arranged a p type isolation layer 9 to isolate the n type layer 8 from substrate 1, and two electrodes 11, 12 given on the surface of this n type layer 8 are connected to base and emitter of the output stage transistor. This way of arrangement is capable of giving operation stabilizing resistances R3, R4 without forming a reverse parallel diode between collector and emitter, thus preventing transistors from breakdown at turn-off time as is so far the case therewith from the presence of reverse parallel diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9025278A JPS5516486A (en) | 1978-07-24 | 1978-07-24 | One-chip darlington transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9025278A JPS5516486A (en) | 1978-07-24 | 1978-07-24 | One-chip darlington transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5516486A true JPS5516486A (en) | 1980-02-05 |
Family
ID=13993298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9025278A Pending JPS5516486A (en) | 1978-07-24 | 1978-07-24 | One-chip darlington transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5516486A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4604640A (en) * | 1983-10-03 | 1986-08-05 | Texas Instruments Incorporated | Darlington transistors |
-
1978
- 1978-07-24 JP JP9025278A patent/JPS5516486A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4604640A (en) * | 1983-10-03 | 1986-08-05 | Texas Instruments Incorporated | Darlington transistors |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5696851A (en) | Static breakdown preventive element | |
| JPS5226181A (en) | Semi-conductor integrated circuit unit | |
| ES8301391A1 (en) | A HIGH VOLTAGE SEMICONDUCTOR SWITCH | |
| JPS5516486A (en) | One-chip darlington transistor | |
| SE8900617D0 (en) | MOS FIELD POWER TRANSISTOR CONTROL TYRISTOR | |
| SE8603364D0 (en) | ANTISATURATION CIRCUIT FOR INTEGRATED PNP TRANSISTOR WITH INTERVENTION CHARACTERISTIC DEFINIBLE ACCORDING TO A PRESET FUNCTION | |
| GB1450750A (en) | Semiconductor darlington circuit | |
| JPS6477319A (en) | Non-stacked ecl type and function circuit | |
| SE8602088L (en) | BIPOLER INTEGRATED CIRCUIT, INCLUDING VERTICAL PNP TRANSISTORS, HAVING ITS COLLECTORS ON THE SUBSTRATE | |
| EP0374968A3 (en) | Switching circuit | |
| JPS5648172A (en) | Semiconductor switching device for power | |
| JPS57145355A (en) | Semiconductor device | |
| JPS5283185A (en) | Semiconductor device | |
| JPS5627954A (en) | Semiconductor device | |
| JPS52132785A (en) | Semiconductor integrating circuit | |
| JPS57176761A (en) | Compound semiconductor device | |
| JPS54162481A (en) | Semiconductor switch | |
| JPS5710815A (en) | Biasing circuit | |
| JPS57198657A (en) | Semiconductor device | |
| JPS5740970A (en) | Monolithic darlington transistor | |
| JPS5294780A (en) | Semiconductor device | |
| JPS55108765A (en) | Semiconductor device | |
| JPS5710968A (en) | Semiconductor device | |
| JPS55156426A (en) | Ttl circuit | |
| JPS5577168A (en) | Semiconductor integrated circuit device |