JPS5294780A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5294780A
JPS5294780A JP1110476A JP1110476A JPS5294780A JP S5294780 A JPS5294780 A JP S5294780A JP 1110476 A JP1110476 A JP 1110476A JP 1110476 A JP1110476 A JP 1110476A JP S5294780 A JPS5294780 A JP S5294780A
Authority
JP
Japan
Prior art keywords
electric power
planar type
power transistor
semiconductor device
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Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1110476A
Other languages
Japanese (ja)
Inventor
Hiroshi Saikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1110476A priority Critical patent/JPS5294780A/en
Publication of JPS5294780A publication Critical patent/JPS5294780A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To minimize the parts number with reduced area by incorporating planar type driving transistor of Darlington connection, planar type electric power transistor plus the resistance which connects emitter and base of electric power transistor into same semiconductor substrate.
JP1110476A 1976-02-04 1976-02-04 Semiconductor device Pending JPS5294780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1110476A JPS5294780A (en) 1976-02-04 1976-02-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1110476A JPS5294780A (en) 1976-02-04 1976-02-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5294780A true JPS5294780A (en) 1977-08-09

Family

ID=11768692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1110476A Pending JPS5294780A (en) 1976-02-04 1976-02-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5294780A (en)

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