JPS55165640A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55165640A
JPS55165640A JP7337979A JP7337979A JPS55165640A JP S55165640 A JPS55165640 A JP S55165640A JP 7337979 A JP7337979 A JP 7337979A JP 7337979 A JP7337979 A JP 7337979A JP S55165640 A JPS55165640 A JP S55165640A
Authority
JP
Japan
Prior art keywords
substrate
film
heat
impurity layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7337979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6250972B2 (2
Inventor
Keiichiro Uda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7337979A priority Critical patent/JPS55165640A/ja
Publication of JPS55165640A publication Critical patent/JPS55165640A/ja
Publication of JPS6250972B2 publication Critical patent/JPS6250972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP7337979A 1979-06-11 1979-06-11 Manufacture of semiconductor device Granted JPS55165640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7337979A JPS55165640A (en) 1979-06-11 1979-06-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7337979A JPS55165640A (en) 1979-06-11 1979-06-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55165640A true JPS55165640A (en) 1980-12-24
JPS6250972B2 JPS6250972B2 (2) 1987-10-28

Family

ID=13516485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7337979A Granted JPS55165640A (en) 1979-06-11 1979-06-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165640A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027422A (ja) * 1988-06-24 1990-01-11 Ricoh Co Ltd レーザによる高温熱処理方法
JP2005183604A (ja) * 2003-12-18 2005-07-07 Semiconductor Leading Edge Technologies Inc 半導体装置の熱処理方法
JP2024053334A (ja) * 2022-10-03 2024-04-15 株式会社デンソー 半導体装置の製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028485U (2) * 1988-06-29 1990-01-19
JPH0250363U (2) * 1988-10-03 1990-04-09
JPH0250362U (2) * 1988-10-03 1990-04-09

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (2) * 1971-08-11 1973-04-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (2) * 1971-08-11 1973-04-04

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027422A (ja) * 1988-06-24 1990-01-11 Ricoh Co Ltd レーザによる高温熱処理方法
JP2005183604A (ja) * 2003-12-18 2005-07-07 Semiconductor Leading Edge Technologies Inc 半導体装置の熱処理方法
JP2024053334A (ja) * 2022-10-03 2024-04-15 株式会社デンソー 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6250972B2 (2) 1987-10-28

Similar Documents

Publication Publication Date Title
DE69330921D1 (de) Herstellungsverfahren von dünnem Film
JPS55165640A (en) Manufacture of semiconductor device
JPS5618430A (en) Manufacture of semiconductor element
JPS5656605A (en) Treatment of magnetic material
JPS55150239A (en) Heat treating method
JPS5635434A (en) Manufacturing of semiconductor device
JPS55111170A (en) Method of manufacturing semiconductor device
JPS5737854A (en) Semiconductor device
JPS57130435A (en) Annealing method of matter by light beam
JPS5710939A (en) Manufacture of semiconductor device
JPS5270762A (en) Electrode formation method of semiconductor element
JPS55111128A (en) Manufacturing method of semiconductor device
GB2014363A (en) Improvements in or relating to semiconductor devices
JPS5683935A (en) Formation of metal layer
JPS5681935A (en) Semiconductor device and its manufacture
JPS55162235A (en) Forming nitride film
JPS53126871A (en) Diode
JPS57192222A (en) Treatment of electromagnetic steel sheet
JPS522273A (en) Method of treating semiconductor substrate
JPS5758325A (en) Manufacture of semiconductor device
JPS5627922A (en) Manufacture of semiconductor device
JPS5644371A (en) Manufacture of field winding for motor
JPS57198958A (en) Solar heat selective absorption film
JPS56110226A (en) Forming method of impurity doped region in semiconductor substrate
JPS57112013A (en) Manufacture of semiconductor device