JPS55165672A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55165672A
JPS55165672A JP7217779A JP7217779A JPS55165672A JP S55165672 A JPS55165672 A JP S55165672A JP 7217779 A JP7217779 A JP 7217779A JP 7217779 A JP7217779 A JP 7217779A JP S55165672 A JPS55165672 A JP S55165672A
Authority
JP
Japan
Prior art keywords
base
regions
emitter
region
independent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7217779A
Other languages
Japanese (ja)
Other versions
JPS6222458B2 (en
Inventor
Yasutaka Nakatani
Shigeaki Nawata
Haruki Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7217779A priority Critical patent/JPS55165672A/en
Publication of JPS55165672A publication Critical patent/JPS55165672A/en
Publication of JPS6222458B2 publication Critical patent/JPS6222458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To magnify the safe operation range by a method wherein the base region that makes up a power transistor of multiemitter structure is divided into plural regions, each of which is independent of the others, for each emitter region and adjacent base regions are connected to each other with a base ballast resistance. CONSTITUTION:The plural emitter regions 13-1-13-4 are formed in the semiconductor substrate 11 that is also used as the collector region, the base regions are provided which surround these emitter regions and the structure of the base regions is as follows. The emitter regions 13-1-13-4 are surrounded by the base regions 32-1-32-4 each of which is independent of the others, adjacent base regions are connected to each other with the base ballast resistances 40 that are dispersedly arranged. After this, the emitter electrode 18 is provided to each emitter region and the base electrode 15 to the base region. In this way, since the base electrodes 15 are connected to the base regions 32-1-32-4 through the base contacts 14 and the resistances 40, the safe operation range can be magnified without damage to the high frequency characteristic.
JP7217779A 1979-06-11 1979-06-11 Semiconductor device Granted JPS55165672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7217779A JPS55165672A (en) 1979-06-11 1979-06-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7217779A JPS55165672A (en) 1979-06-11 1979-06-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55165672A true JPS55165672A (en) 1980-12-24
JPS6222458B2 JPS6222458B2 (en) 1987-05-18

Family

ID=13481675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7217779A Granted JPS55165672A (en) 1979-06-11 1979-06-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165672A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167368A (en) * 1980-09-19 1985-08-30 シ−メンス、アクチエンゲゼルシヤフト Integrated bipolar power transistor device
JPS62142356A (en) * 1985-12-17 1987-06-25 Sanken Electric Co Ltd transistor
JPS62298172A (en) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd Transistor
JPS63164252U (en) * 1987-02-27 1988-10-26
JPS63301563A (en) * 1987-01-29 1988-12-08 Fuji Electric Co Ltd Gate turn off thyrister
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
US6784747B1 (en) 2003-03-20 2004-08-31 Analog Devices, Inc. Amplifier circuit
US6816015B2 (en) 2003-03-27 2004-11-09 Analog Devices, Inc. Amplifier circuit having a plurality of first and second base resistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106777A (en) * 1973-02-09 1974-10-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106777A (en) * 1973-02-09 1974-10-09

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167368A (en) * 1980-09-19 1985-08-30 シ−メンス、アクチエンゲゼルシヤフト Integrated bipolar power transistor device
JPS62142356A (en) * 1985-12-17 1987-06-25 Sanken Electric Co Ltd transistor
JPS62298172A (en) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd Transistor
JPS63301563A (en) * 1987-01-29 1988-12-08 Fuji Electric Co Ltd Gate turn off thyrister
JPS63164252U (en) * 1987-02-27 1988-10-26
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
EP0597397A3 (en) * 1992-11-09 1995-01-04 Texas Instruments Inc Transistor with ballast impedance at the base.
US6784747B1 (en) 2003-03-20 2004-08-31 Analog Devices, Inc. Amplifier circuit
US6816015B2 (en) 2003-03-27 2004-11-09 Analog Devices, Inc. Amplifier circuit having a plurality of first and second base resistors

Also Published As

Publication number Publication date
JPS6222458B2 (en) 1987-05-18

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