JPS55165669A - Bipolar-mos device - Google Patents

Bipolar-mos device

Info

Publication number
JPS55165669A
JPS55165669A JP7229379A JP7229379A JPS55165669A JP S55165669 A JPS55165669 A JP S55165669A JP 7229379 A JP7229379 A JP 7229379A JP 7229379 A JP7229379 A JP 7229379A JP S55165669 A JPS55165669 A JP S55165669A
Authority
JP
Japan
Prior art keywords
region
type
layer
substrate
linear part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7229379A
Other languages
Japanese (ja)
Inventor
Norio Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7229379A priority Critical patent/JPS55165669A/en
Publication of JPS55165669A publication Critical patent/JPS55165669A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the characteristic of a linear part by a method wherein the epitaxial layer to be grown on the semiconductor substrate is made to have a low concn. of a same conductivity type impurity as the substrate, the linear part is made to have a self-isolation structure of the collector and a region of high concentration is formed on the substrate surface. CONSTITUTION:The p<->-type layer 12 having lower concn. of the impurity than the substrate 1 is epitaxially grown on the p<->-type Si substrate 1 through the n<+>-type embedded region 3, the whole surface of the substrate is coated with oxide film, the apertures corresponding to both ends of the region are made, the n<+>-type collector isolation region 13 that reaches the region 3 is formed by the diffusion method, and the layer 12 on the region 3 is isolated like an island. Next the n<+>- type emitter region 6 is formed in said isolated layer 12 by the diffusion method, simultaneously the same n-type impurity is diffused in other region of the layer 12 to form the n<+>-type region 8. After this, p-type impurity ions are injected into the layer 12, which is surrounded by the regions 13, to change only the region of layer 12, which surrounds the region 6, into a p<+>-type region, that is, the p<+>-type base region 14. In this way, a bipolar-MOS device with a high integration and a good characteristic of the linear part can be obtained.
JP7229379A 1979-06-11 1979-06-11 Bipolar-mos device Pending JPS55165669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7229379A JPS55165669A (en) 1979-06-11 1979-06-11 Bipolar-mos device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7229379A JPS55165669A (en) 1979-06-11 1979-06-11 Bipolar-mos device

Publications (1)

Publication Number Publication Date
JPS55165669A true JPS55165669A (en) 1980-12-24

Family

ID=13485067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7229379A Pending JPS55165669A (en) 1979-06-11 1979-06-11 Bipolar-mos device

Country Status (1)

Country Link
JP (1) JPS55165669A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188860A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Semiconductor device
JPS5864060A (en) * 1981-10-13 1983-04-16 Toshiba Corp Manufacture of semiconductor device
JPS6017943A (en) * 1983-07-08 1985-01-29 Matsushita Electronics Corp Manufacturing method of semiconductor device
JPS61285750A (en) * 1985-06-12 1986-12-16 Nissan Motor Co Ltd Semiconductor device
JPS62104068A (en) * 1985-10-30 1987-05-14 Mitsubishi Electric Corp Semiconductor integrated circuit device
US4737469A (en) * 1984-01-19 1988-04-12 Honeywell Inc. Controlled mode field effect transistors and method therefore
JPH0228937A (en) * 1988-07-19 1990-01-31 Matsushita Electron Corp Semiconductor device
JPH03171765A (en) * 1989-11-30 1991-07-25 Toshiba Corp Integrated circuit device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188860A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Semiconductor device
JPS5864060A (en) * 1981-10-13 1983-04-16 Toshiba Corp Manufacture of semiconductor device
JPS6017943A (en) * 1983-07-08 1985-01-29 Matsushita Electronics Corp Manufacturing method of semiconductor device
US4737469A (en) * 1984-01-19 1988-04-12 Honeywell Inc. Controlled mode field effect transistors and method therefore
JPS61285750A (en) * 1985-06-12 1986-12-16 Nissan Motor Co Ltd Semiconductor device
JPS62104068A (en) * 1985-10-30 1987-05-14 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH0228937A (en) * 1988-07-19 1990-01-31 Matsushita Electron Corp Semiconductor device
JPH03171765A (en) * 1989-11-30 1991-07-25 Toshiba Corp Integrated circuit device

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