JPS5518006A - Mos-type dynamic memory - Google Patents

Mos-type dynamic memory

Info

Publication number
JPS5518006A
JPS5518006A JP8997678A JP8997678A JPS5518006A JP S5518006 A JPS5518006 A JP S5518006A JP 8997678 A JP8997678 A JP 8997678A JP 8997678 A JP8997678 A JP 8997678A JP S5518006 A JPS5518006 A JP S5518006A
Authority
JP
Japan
Prior art keywords
substrate
region
mos
constitution
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8997678A
Other languages
Japanese (ja)
Inventor
Toru Furuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8997678A priority Critical patent/JPS5518006A/en
Publication of JPS5518006A publication Critical patent/JPS5518006A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce noises and to make the size small by providing a conductive layer, whose direction of current flow is opposite to a semiconductor substrate, to the depth of 1mum or more from the surface of the substrate, at the portion of the side of a circuit element outside a memory cell. CONSTITUTION:Regions 1 and 2 are formed on a same substrate 9. A memory cell 3 is formed on the region 1; and a gate 4, a source 5, and a drain 6 are formed on the region 2. A conductive layer 7 whose direction of current flow is opposite to that of the substrate is formed so that it reaches the point sufficiently deep from the surface of the substrate, thereby minority carriers which are generated in the region 2 and are capable of moving in the substrate 9 are prevented from moving into the region 1. In this constitution, noises are eliminated, holding characteristics can be enhanced accordingly, and the size can be reduced.
JP8997678A 1978-07-25 1978-07-25 Mos-type dynamic memory Pending JPS5518006A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8997678A JPS5518006A (en) 1978-07-25 1978-07-25 Mos-type dynamic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8997678A JPS5518006A (en) 1978-07-25 1978-07-25 Mos-type dynamic memory

Publications (1)

Publication Number Publication Date
JPS5518006A true JPS5518006A (en) 1980-02-07

Family

ID=13985696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8997678A Pending JPS5518006A (en) 1978-07-25 1978-07-25 Mos-type dynamic memory

Country Status (1)

Country Link
JP (1) JPS5518006A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851558A (en) * 1981-09-22 1983-03-26 Nec Corp Mos type semiconductor device
JPS6052053A (en) * 1983-08-31 1985-03-23 Mitsubishi Electric Corp Semiconductor memory device
JPS60140862A (en) * 1983-12-28 1985-07-25 Nec Corp Semiconductor memory device
JPS6393148A (en) * 1986-10-07 1988-04-23 Nec Corp Semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851558A (en) * 1981-09-22 1983-03-26 Nec Corp Mos type semiconductor device
JPS6052053A (en) * 1983-08-31 1985-03-23 Mitsubishi Electric Corp Semiconductor memory device
JPS60140862A (en) * 1983-12-28 1985-07-25 Nec Corp Semiconductor memory device
JPS6393148A (en) * 1986-10-07 1988-04-23 Nec Corp Semiconductor memory device

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