JPS5521114A - Junction break-down type programmable read-only memory semiconductor device - Google Patents

Junction break-down type programmable read-only memory semiconductor device

Info

Publication number
JPS5521114A
JPS5521114A JP9358578A JP9358578A JPS5521114A JP S5521114 A JPS5521114 A JP S5521114A JP 9358578 A JP9358578 A JP 9358578A JP 9358578 A JP9358578 A JP 9358578A JP S5521114 A JPS5521114 A JP S5521114A
Authority
JP
Japan
Prior art keywords
region
emitter
writing
junction
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9358578A
Other languages
Japanese (ja)
Inventor
Nobuhiko Ono
Tadao Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
NTT Inc
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP9358578A priority Critical patent/JPS5521114A/en
Publication of JPS5521114A publication Critical patent/JPS5521114A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To achieve writing in a short time by applying a collective current to a P<+> region formed in a part of an emitter-base junction. CONSTITUTION:When a writing pulse may be applied to the intermediate line between an emitter electrode E of a selected memory cell and a word line current absorption terminal C so that the junction face between an emitter region 17 and base region 14 is biased reversely, almost of the writing current is directed to a collector region 13 and N<+>-type buried layer 12 through a P<+>region adjacent to the emitter region 17. Therefore, the writing can be established by breaking down the P-N junction of the contact portion between the emitter region 17 and P<+> 15. In this case, because the area of the contact portion of the emitter region 17 with the P<+> region 15 can be reduced, the collection of the current is easily caused and a break-down is frequently occurred.
JP9358578A 1978-08-02 1978-08-02 Junction break-down type programmable read-only memory semiconductor device Pending JPS5521114A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9358578A JPS5521114A (en) 1978-08-02 1978-08-02 Junction break-down type programmable read-only memory semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9358578A JPS5521114A (en) 1978-08-02 1978-08-02 Junction break-down type programmable read-only memory semiconductor device

Publications (1)

Publication Number Publication Date
JPS5521114A true JPS5521114A (en) 1980-02-15

Family

ID=14086350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9358578A Pending JPS5521114A (en) 1978-08-02 1978-08-02 Junction break-down type programmable read-only memory semiconductor device

Country Status (1)

Country Link
JP (1) JPS5521114A (en)

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