JPS5521123A - Manufacturing method of photomask - Google Patents

Manufacturing method of photomask

Info

Publication number
JPS5521123A
JPS5521123A JP9359678A JP9359678A JPS5521123A JP S5521123 A JPS5521123 A JP S5521123A JP 9359678 A JP9359678 A JP 9359678A JP 9359678 A JP9359678 A JP 9359678A JP S5521123 A JPS5521123 A JP S5521123A
Authority
JP
Japan
Prior art keywords
pattern
black region
patterns
target
black
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9359678A
Other languages
Japanese (ja)
Inventor
Hisao Yamaguchi
Katsunori Kameyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9359678A priority Critical patent/JPS5521123A/en
Publication of JPS5521123A publication Critical patent/JPS5521123A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To obtain a photomask without causing no failure in a scribing by utilizing a reticle for surrounding around a right and left pattern on a pair of target patterns and having a black region common to the patterns.
CONSTITUTION: A reticle target pattern 8 has a pair of symmetrical, black target patterns 2a and 2b in one independent section, and the black region 10m surrounding around the circumference of the right and left pattern and acommon black region between the patterns 2a and 2b. A real pattern 3a, 3b... are arranged in a predetermined distance to be baked, and the right directed pattern 2a and left directed pattern 2b of the target pattern are baked in two sections separated from the other. The light is not sensitive in the boundary portion wherein the black region 10m and a black region 4 of a chip pattern are put in turn on each another, therefore a black region 12 for a scribing line can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP9359678A 1978-08-02 1978-08-02 Manufacturing method of photomask Pending JPS5521123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9359678A JPS5521123A (en) 1978-08-02 1978-08-02 Manufacturing method of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9359678A JPS5521123A (en) 1978-08-02 1978-08-02 Manufacturing method of photomask

Publications (1)

Publication Number Publication Date
JPS5521123A true JPS5521123A (en) 1980-02-15

Family

ID=14086682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9359678A Pending JPS5521123A (en) 1978-08-02 1978-08-02 Manufacturing method of photomask

Country Status (1)

Country Link
JP (1) JPS5521123A (en)

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